Stacked semiconductor device and method of testing the same
View Patent ↗A stacked semiconductor device includes: an internal circuit; a through electrode provided to penetrate through a semiconductor substrate; a test wiring to which a predetermined potential different from a substrate potential is supplied at a time of a test; a first switch arranged between the through electrode and the internal circuit; a second switch arranged between the through electrode and the test wiring; and a control circuit that exclusively turns on the first and the second switches. Thereby, it becomes possible to perform an insulation test in a state that the through electrode and the internal circuit are cut off. Thus, even when a slight short-circuit that does not lead to a current defect occurs, the short circuit can be detected.
1. A semiconductor device, comprising:
first, second and third internal circuits each formed in a semiconductor substrate;
first, second and third through electrodes each formed to penetrate the semiconductor substrate;
a wiring supplied with a test voltage in a test mode;
a first switch connected between the first internal circuit and the first through electrode;
a second switch connected between the second internal circuit and the second through electrode;
a third switch connected between the third internal circuit and the third through electrode; and
fourth, fifth and sixth switches each having first and second terminals, the first terminals of the fourth, fifth and sixth switches being connected in common to the wiring, and the second terminals of the fourth, fifth and sixth switches being connected respectively to the first, second and third through electrodes;
each of the first, second and third switches being rendered nonconductive in the test mode and of fourth, fifth and sixth switches being rendered conductive in the test mode to supply the test voltage respectively to the first, second and third through electrodes.
2. The device as claimed in claim 1 , wherein each of the first, second and third switches being rendered conductive in a normal mode and each of the fourth, fifth and sixth switches being rendered nonconductive in the normal mode.
3. The device as claimed in claim 1 , wherein each of the first, second and third switches is rendered nonconductive by the test voltage and each of the fourth, fifth and sixth switches is rendered conductive by the test voltage.
4. The device as claimed in claim 1 , wherein the wiring is connected to a measuring pad to receive the test voltage.
5. The device as claimed in claim 1 , further comprising a precharge circuit formed in the semiconductor substrate and connected to the wiring, the precharge circuit being activated to precharge the wiring to the test voltage, and each of the first, second and third switches being rendered nonconductive and each of the fourth, fifth and sixth switches being rendered conductive after the wiring has been precharged to the test voltage.
6. The device as claimed in claim 5 , further comprising a detection circuit connected to the wiring to detect a potential on the wiring.