Granted Patent B2

US 7,849,424 · App. 11/871,053 · Granted Dec 7, 2010

Abstract

Claims (46)

1. A method for controlling a process of fabricating a transparent conductor film having nanowires, the method comprising:

receiving, by a processor, an input specification of a physical characteristic of the transparent conductor film;

comparing, by the processor, the input specification to stored reference data correlating a physical characteristic of reference transparent conductor films to a physical characteristic of reference nanowires;

generating a manufacturing specification that correlates a target physical characteristic of the nanowires to the input specification; and

controlling a physical characteristic of the nanowires of the transparent conductor film based on the manufacturing specification.

2. The method of claim 1 , wherein the input specification comprises at least one of a sheet resistance, an optical density, a transmission, and a haze.

3. The method of claim 1 , wherein the target physical characteristic of the nanowires comprise at least one of a nanowire length, nanowire diameter, or nanowire density.

4. The method of claim 1 , wherein the stored reference data comprises one or more reference data sets indicative of characteristic sheet resistances, characteristic optical densities, characteristic transmission levels, characteristic haze levels, or combinations thereof.

5. The method of claim 1 , wherein the manufacturing specification comprises:

one or more nanowire dimensions and corresponding nanowire densities that satisfy at least one physical characteristic of the input specification, and that satisfy or exceed a minimum percolation density.

6. The method of claim 5 wherein the minimum percolation density is about a factor of 5.7 greater than an inverse of an average of a square of nanowire lengths.

7. The method of claim 1 , wherein the manufacturing specification comprises:

a nanowire dimension and a nanowire density that satisfy at least one physical characteristic of the transparent conductor film from the received input specification, and that satisfy or exceed a minimum percolation density by at least a factor of about 1.1.

8. The method of claim 1 , wherein generating the manufacturing specification comprises generating a manufacturing specification that satisfies at least one physical characteristic of the transparent conductor film from the received input specification.

9. The method of claim 1 , wherein the manufacturing specification comprises one or more nanowire density versus sheet resistance over nanowire resistance plots; nanowire length versus nanowire diameter, for a given sheet resistance plot; nanowire length over nanowire diameter square versus sheet resistance plots; percent haze versus nanowire density times nanowire cross-sectional area plots; or optical density versus nanowire density times nanowire cross-sectional area plots.

10. A non-transitory computer readable storage medium comprising instructions that, when executed on a computer, execute a method for designing a nanowire transparent conductor, the method comprising:

determining sets of nanowire values based on information indicative of a desired electrical or optical property of the nanowire transparent conductor, the sets comprising a nanowire length, a nanowire width or diameter, and a corresponding density; and

generating a manufacturing specification based on the determined sets of nanowire values for manufacturing the transparent conductor.

11. The computer readable storage medium of claim 10 , wherein determining the sets of nanowire values comprises:

retrieving model data, correlating a nanowire length, nanowire diameter, or a nanowire density, or combinations thereof, to corresponding electrical or optical property of reference nanowire transparent conductors, from a memory on which is stored a model for modeling sets of nanowire values based on information indicative of the desired electrical or optical property of the nanowire transparent conductor; and

determining sets of nanowire values based on the retrieved model data.

12. The computer readable storage medium of claim 10 , wherein the manufacturing specification includes a manufacturing process protocol, an average nanowire length, an average nanowire diameter, an average nanowire resistance, or an average nanowire density.

13. The computer readable storage medium of claim 10 , wherein determining the sets of nanowire values comprises:

retrieving stored data correlating electrical or optical property of reference nanowire transparent conductors to physical measurements of reference nanowire-including transparent conductors, experimental measurements of nanowire compositions, or manufacturing conditions that affect electrical and optical properties of the nanowire-including transparent conductor; and

determining sets of nanowire values based on the retrieved stored data.

14. The computer readable storage medium of claim 10 , wherein the manufacturing specification include's a nanowire density versus sheet resistance over nanowire resistance plot; a nanowire length versus nanowire diameter, for a given sheet resistance plot; a nanowire length over nanowire diameter square versus sheet resistance plot; a percent haze versus nanowire density times nanowire cross-sectional area plot; or an optical density versus nanowire density times nanowire cross-sectional area plot.

15. A system for evaluating optical and electrical manufacturing criteria for a transparent conductor, comprising:

a database comprising stored reference transparent conductor data, the stored reference transparent conductor data comprising data correlating a nanowire length, a nanowire diameter, a nanowire density, or a nanowire concentration to electrical or optical properties of a transparent conductor film; and

a controller subsystem configured to compare input acceptance manufacturing criteria for a transparent conductor to the stored reference transparent conductor data, and to generate a response based on the comparison;

wherein the inputted acceptance manufacturing criteria comprises at least one of a sheet resistance level, an optical density level, a transmission, or a haze level.

16. The system of claim 15 , wherein the stored reference transparent conductor data comprises characteristic sheet resistance data, characteristic optical density data, characteristic transmission data, and characteristic haze data, or combinations thereof.

17. The system of claim 15 , wherein the stored reference transparent conductor data comprises empirical sheet resistance data, empirical optical density data, empirical transmission data, and empirical haze data or combinations thereof.

18. The system of claim 15 , wherein the stored reference transparent conductor data comprises nanowire density versus sheet resistance over nanowire resistance data; nanowire length versus nanowire diameter, for a given sheet resistance data; nanowire length over nanowire diameter square versus sheet resistance data; percent haze versus nanowire density times nanowire cross-sectional area data; or optical density versus nanowire density times nanowire cross-sectional area data; or combinations thereof.

19. The system of claim 15 , wherein the response comprises at least one of a comparison plot; a preferred manufacturing protocol; or a table comprising nanowire dimensions, nanowire densities, and corresponding rating values.

20. The system of claim 15 , wherein the controller subsystem comprises one or more microprocessors.

21. A method for designing a nanowire transparent conductor, the method comprising:

automatically determining sets of nanowire values based on information indicative of a desired electrical or optical property of the nanowire transparent conductor, the sets comprising a nanowire length, a nanowire width or diameter, and a corresponding density; and

automatically generating, by a processor, a manufacturing specification based on the determined sets of nanowire values for manufacturing the transparent conductor.

22. The method of claim 21 , wherein automatically determining the sets of nanowire values comprises:

retrieving model data, correlating a nanowire length, nanowire diameter, or a nanowire density, or combinations thereof, to corresponding electrical or optical property of reference nanowire transparent conductors, from a memory on which is stored a model for modeling sets of nanowire values based on information indicative of the desired electrical or optical property of the nanowire transparent conductor; and

automatically determining sets of nanowire values based on the retrieved model data.

23. The method of claim 21 , wherein the manufacturing specification includes at least one of a manufacturing process protocol, an average nanowire length, an average nanowire diameter, an average nanowire resistance, and an average nanowire density.

24. The method of claim 21 , wherein determining the sets of nanowire values comprises:

retrieving stored data correlating electrical or optical property of reference nanowire transparent conductors to physical measurements of reference nanowire including transparent conductors, experimental measurements of nanowire compositions, or manufacturing conditions that affect electrical and optical properties of the nanowire-including transparent conductor; and

automatically determining sets of nanowire values based on the retrieved stored data.

25. The method of claim 21 , wherein the manufacturing specification includes at least one of a nanowire density versus sheet resistance over nanowire resistance plot; a nanowire length versus nanowire diameter, for a given sheet resistance plot; a nanowire length over nanowire diameter square versus sheet resistance plot; a percent haze versus nanowire density times nanowire cross-sectional area plot; and an optical density versus nanowire density times nanowire cross-sectional area plot.

Assignments (9)