Heat treatment apparatus and heat treatment method
View Patent ↗In a heat treatment apparatus, a holding part moves upwardly to receive a semiconductor wafer transported into a chamber and placed on support pins. The semiconductor wafer held in close proximity to a light-transmittable plate by the holding part is preheated by a hot plate, and is then flash-heated by a flash of light emitted from flash lamps. Thereafter, the holding part moves downwardly to transfer the semiconductor wafer to the support pins, and the semiconductor wafer is transported out of the chamber. Then, a new semiconductor wafer is transported into the chamber. The holding part is adapted to perform such a series of operations of moving upwardly and downwardly also when in a standby condition pending the transport of the first semiconductor wafer in a lot into the chamber.
1. A heat treatment method for exposing a substrate placed on a heating plate to a flash of light emitted from a flash lamp to perform a heating process on the substrate, comprising the steps of:
upwardly and downwardly moving said heating plate between a transfer position and a treatment position in accordance with a predetermined up-and-down pattern of movement when performing a steady process on a substrate to be treated, said transfer position being a position in which said heating plate lies when a substrate is transported into and out of a chamber for housing said heating plate therein, said treatment position being a position in which said heating plate lies when a substrate is exposed to a flash of light emitted from said flash lamp; and
upwardly and downwardly moving said heating plate in accordance with said up-and-down pattern during the entire period when the heating plate is in a standby condition pending the transport of the substrate into said chamber.
2. The heat treatment method according to claim 1 , wherein
said flash lamp emits a flash of light when said heating plate is moved to said treatment position in accordance with said up-and-down pattern in said standby condition.
3. The heat treatment method according to claim 1 , wherein
a gas is supplied into said chamber in accordance with a predetermined gas supply pattern when performing said steady process on a substrate to be treated, and the gas is supplied into said chamber in accordance with said gas supply pattern in operative association with the movement of said heating plate in accordance with said up-and-down pattern in said standby condition.
4. The heat treatment method according to claim 1 , wherein
the upward and downward movement of said heating plate in said standby condition is started so that said heating plate is in said transfer position at the time of the transport of the substrate into said chamber.