High-quality CMOS image sensor and photo diode
View Patent ↗Provided are a high-quality CMOS image sensor and a photo diode, which can be fabricated in sub-90 nm regime using nanoscale CMOS technology. The photo diode includes: a p-type well; an internal n-type region formed under a surface of the p-type well; and a surface p-type region including a highly doped p-type SiGeC epitaxial layer or a polysilicon layer deposited on a top surface of the p-type well over the internal n-type region. The image sensor includes: a photo diode including an internal n-type region and a surface p-type region; a transfer transistor for transmitting photo-charges generated in the photo diode to a floating diffusion node; and a driving transistor for amplifying a variation in an electric potential of the floating diffusion node due to the photo-charges. The image sensor further includes a floating metal layer for functioning as the floating diffusion node and applying an electric potential from a drain of the transfer transistor to a gate of the driving transistor.
1. A photo diode comprising:
a p-type well;
an internal n-type region formed under a surface of the p-type well; and
a surface p-type region including a highly doped p-type SiGeC epitaxial layer or a polysilicon layer deposited on a top surface of the p-type well over the internal n-type region.
2. The photo diode according to claim 1 , wherein the surface p-type region has a doping concentration of 2×10 18 /cm 3 or higher (preferably, 2×10 18 /cm 3 ˜5×10 19 /cm) and a thickness of 150 Å or less (preferably, 100 Ř150 Å).
3. An image sensor comprising:
a photo diode including an internal n-type region and a surface p-type region;
a transfer transistor for transmitting photo-charges generated in the photo diode to a floating diffusion node; and
a driving transistor for amplifying a variation in an electric potential of the floating diffusion node due to the photo-charges,
the image sensor further comprising a floating metal layer for functioning as the floating diffusion node and applying an electric potential from a drain of the transfer transistor to a gate of the driving transistor.
4. The image sensor according to claim 3 , wherein the photo diode is the photo diode comprising a p-type well; an internal n-type region formed under a surface of the p-type well; and a surface p-type region including a highly doped p-type SiGeC epitaxial layer or a polysilicon layer deposited on a top surface of the p-type well over the internal n-type region.
5. The image sensor according to claim 3 , wherein the transfer transistor and the driving transistor are depletion-type transistors of which threshold voltages are 0V or lower (preferably, −0.5V˜0V).
6. The image sensor according to claim 3 , further comprising:
a reset transistor for resetting the floating diffusion node; and
a selection transistor for controlling an output signal of the driving transistor,
wherein the reset transistor and the selection transistor are depletion-type transistors of which threshold voltages are 0V or lower (preferably, −0.5V˜0V).
7. The image sensor according to claim 3 , further comprising:
a reset transistor for resetting the floating diffusion node; and
a selection transistor for controlling an output signal of the driving transistor,
wherein the transfer transistor, the driving transistor, the reset transistor, and the selection transistor have gate oxide layers formed to thickness of 30 Å or more (preferably, 30 Ř50 Å).