Semiconductor device
View Patent ↗A semiconductor device including a first insulating layer having a hydroxyl radical formed over a semiconductor substrate; a line layer having a plurality of line patterns formed over the first insulating layer, the plurality if line patterns being arranged such that a spatial gap is provided therebetween; a fluorine-doped second insulating layer formed in the spatial gap between respective line patterns; and a multilayered diffusion prevention layer including a first oxide layer for suppressing an increase of a dielectric constant between the plurality of line patterns and a second oxide layer for preventing the diffusion of fluorine from the fluorine-doped second insulating layer into the first insulating layer.
1. An apparatus comprising:
a first insulating layer formed over a semiconductor substrate;
a diffusion prevention layer formed over the first insulating layer; and
a second insulating layer formed over the diffusion preventing layer,
wherein the second insulating layer is doped with fluorine,
wherein the diffusion prevention layer comprises a multiplayer structure,
wherein the multilayer structure comprises a first oxide layer for suppressing an increase of a dielectric constant between metal lines and a second oxide layer for preventing the diffusion of fluorine from the second insulating layer into the first insulating layer, and
wherein the first oxide layer comprises a carbon-doped layer and the second oxide layer comprises a nitrogen-doped layer.
2. The apparatus of claim 1 , further comprising a line layer having a plurality of line patterns formed over the first insulating layer, wherein the plurality if line patterns are arranged such that a spatial gap is provided between respective line patterns.
3. The apparatus of claim 1 , wherein the carbon-doped layer and the nitrogen-doped layer are formed in a stack arrangement such that the carbon-doped layer is formed over and directly contacts both the plurality of line patterns and the first insulating layer and the nitrogen-doped layer is formed over and directly contacts the carbon-doped layer.
4. The apparatus of claim 3 , wherein the nitrogen-doped layer has a thickness sufficient to prevent fluorine diffusion.
5. The apparatus of claim 4 , wherein the nitrogen-doped layer has a thickness of approximately 300 Å.
6. The apparatus of claim 3 , wherein the carbon-doped layer has a thickness of approximately 200 Å.
7. The apparatus of claim 1 , wherein the first insulating layer includes a hydroxyl radical.
8. The apparatus of claim 1 , wherein the first insulating layer comprises a TEOS layer.
9. An apparatus comprising:
a first insulating layer having a hydroxyl radical formed over a semiconductor substrate;
a line layer having a plurality of line patterns formed over the first insulating layer, wherein the plurality of line patterns are arranged such that a spatial gap is provided between respective line patterns;
a fluorine-doped second insulating layer formed in the spatial gap between respective line patterns; and
a multilayered diffusion prevention layer including a first oxide layer for suppressing an increase of a dielectric constant between the plurality of line patterns and a second oxide layer for preventing the diffusion of fluorine from the fluorine-doped second insulating layer into the first insulating layer.