Structure and method for making high density MOSFET circuits with different height contact lines
View Patent ↗Embodiments herein present a structure, method, etc. for making high density MOSFET circuits with different height contact lines. The MOSFET circuits include a contact line, a first gate layer situated proximate the contact line, and at least one subsequent gate layer situated over the first gate layer. The contact line includes a height that is less than a combined height of the first gate layer and the subsequent gate layer(s). The MOSFET circuits further include gate spacers situated proximate the gate layers and a single contact line spacer situated proximate the contact line. The gate spacers are taller and thicker than the contact line spacer.
1. A MOSFET circuit, comprising:
a contact line;
a first gate layer situated proximate said contact line, wherein said contact line comprises a height that is less than a height of said first gate layer;
two contact line spacers situated proximate said contact line, wherein said contact line comprises a height that is less than a height of said first gate layer, and wherein a first dielectric member is situated over said two contact line spacers; and
a second dielectric member situated over said first gate layer, and over at least one gate spacer.
2. The MOSFET circuit according to claim 1 , further comprising:
gate spacers situated proximate said first gate layer; and
a single contact line spacer situated proximate said contact line,
wherein said contact line spacer comprises a height that is less than a height of said gate spacers.
3. The MOSFET circuit according to claim 1 , further comprising:
gate spacers situated proximate said first gate layer; and
a single contact line spacer situated proximate said contact line,
wherein said contact line spacer comprises a thickness that is less than a thickness of said gate spacers.
4. The MOSFET circuit according to claim 1 , further comprising at least one metal via situated proximate said contact line.
5. A MOSFET circuit, comprising:
a contact line;
a first gate layer situated proximate said contact line;
at least one second gate layer situated over said first gate layer;
gate spacers situated proximate said first gate layer and said second gate layer;
less than two contact line spacers situated proximate said contact line, wherein a first dielectric member is situated over said less than two contact line spacers: and
a second dielectric member situated over said first gate layer, and over at least one gate spacer.
6. The MOSFET circuit according to claim 5 , wherein said contact line comprises a height that is less than a combined height of said first gate layer and said second gate layer.
7. The MOSFET circuit according to claim 5 , wherein said less than two contact line spacers comprises a height that is less than a height of said gate spacers.
8. The MOSFET circuit according to claim 5 , wherein said less than two contact line spacers comprises a thickness that is less than a thickness of said gate spacers.
9. The MOSFET circuit according to claim 5 , in which the gate spacers and the contact line spacers are formed from nitride.
10. The MOSFET circuit according to claim 9 , in which the first gate layer comprises polysilicon and metal.
11. The MOSFET circuit according to claim 9 , in which the second gate layer comprises polysilicon germanium.
12. The MOSFET circuit according to claim 5 , further comprising at least one metal via situated proximate said contact line.
13. The MOSFET circuit according to claim 12 , in which the metal via comprises tungsten.
14. A MOSFET circuit, comprising:
a contact line; and
a first gate layer situated proximate said contact line,
wherein said contact line is lower than a top of said first gate layer; and a single contact line spacer situated proximate said contact line;
gate spacers situated proximate said first gate layer, wherein said single contact line spacer comprises a height that is shorter than a height of said gate spacers;
a first dielectric member situated over said single contact line spacer; and
a second dielectric member situated over said first gate layer, and over at least one gate spacer.
15. The MOSFET circuit according to claim 14 , in which the gate spacers and the contact line spacers are formed from nitride.
16. The MOSFET circuit according to claim 14 , in which the first gate layer comprises polysilicon and metal.
17. The MOSFET circuit according to claim 14 , in which the second gate layer comprises polysilicon germanium.