Semiconductor device and method for manufacturing same
View Patent ↗When a metal cap film is provided on an electric fuse, the break-ability of the electric fuse is reduced. A semiconductor device 1 includes interconnects 10 , an electric fuse 20 and metal cap films 30 . Both of the interconnects 10 and the electric fuse 20 are composed of Cu. The interconnects 10 and the electric fuse 20 are provided in the same layer in the interconnect layer 40 . The metal cap films 30 are provided only on the interconnects 10 and not provided on the electric fuse 20.
1. A semiconductor device, comprising:
an interconnect composed of copper and provided in an interconnect layer;
an electric fuse composed of copper and provided in said interconnect layer, said electric fuse and said interconnect being provided in a same layer in said interconnect layer; and
a metal cap film provided only on said interconnect and not provided on said electric fuse, wherein said interconnect and said electric fuse having substantially the same thickness.
2. The semiconductor device as set forth in claim 1 ,
wherein a first data ratio, which is a data ratio in a region in vicinity of said electric fuse, is smaller than a second data ratio, which is a data ratio in a region provided with said interconnect.
3. The semiconductor device as set forth in claim 2 ,
wherein said first data ratio is equal to or lower than 5%, and said second data ratio is equal to or higher than 10%.
4. The semiconductor device as set forth in claim 1 ,
wherein a distance between a first conductor and said electric fuse is larger than a distance between a second conductor and said interconnect, said first conductor being provided in the layer that includes said interconnect and being closest to said electric fuse, said second conductor being provided in the layer that includes said interconnect and being closest to said interconnect.
5. The semiconductor device as set forth in claim 1 , further comprising a dummy interconnect provided in vicinity of said interconnect.
6. The semiconductor device as set forth in claim 1 , further comprising a terminal, which is electrically coupled to an end of said electric fuse,
wherein said terminal is provided in a layer that is located at higher level than said electric fuse.
7. The semiconductor device as set forth in claim 6 ,
wherein said metal cap film is provided on said terminal.
8. The semiconductor device as set forth in claim 1 ,
wherein said metal cap film contains cobalt (Co) or nickel (Ni).
9. The semiconductor device as set forth in claim 1 ,
wherein said metal cap film is cobalt tungsten phosphorous (CoWP) film.