Method and solution to grow charge-transfer complex salts
The present disclosure relates to methods and solutions for growing metal charge-transfer salts on a metal surface, such as a metal layer at the bottom of a via hole. The method makes use of a solution comprising a salt additive. The temperature during growth is in the range of −100° C. to +100° C. The method allows controlled growth of the metal charge transfer salt inside via hole while limiting growth outside the via hole. The method further limits corrosion of the metallic connections at the bottom of the via hole.
1. A method for growing a charge-transfer complex salt M + A − on the surface of a monovalent metal M, wherein M is either Cu or Ag, said method comprising the step of contacting said metal M surface at a temperature from −100° C. to 100° C. with a solution comprising:
at least one organic solvent comprising at least one nitrile function;
at least one electron acceptor molecule A; and
at least one salt additive being independently selected from the group consisting of M + Y − or E + A − , wherein Y − and E + are non-reactive counterions, A − is the anion corresponding to said acceptor molecule A and M + is the cation corresponding to the metal M;
wherein said contacting of said metal surface with said solution induces a spontaneous chemical reaction leading to growth of the charge-transfer complex salt M + A − .
2. A method according to claim 1 , wherein said metal M surface is at the bottom of a via hole in a substrate.
3. A method according to claim 1 , wherein said temperature is from −100° C. to +30° C.
4. A method according to claim 1 , wherein said contacting step is performed during a time period of 0.1 second to 5 minutes.
5. A method for growing a charge-transfer complex salt M + A − on the surface of a monovalent metal M, wherein M is either Cu or Ag, and wherein the method includes contacting the surface of the monovalent metal M with a solution comprising:
at least one organic solvent comprising one nitrile function;
at least one electron acceptor molecule A;
at least one co-solvent wherein said at least one electron acceptor molecule A is more soluble than said charge-transfer complex salt M + A − ; and
at least one salt additive being independently selected from the group consisting of M + Y − and E + A − wherein Y − and E + are non-reactive counter-ions, A − is the anion corresponding to said acceptor molecule A and M + is the cation corresponding to the metal M;
wherein said contacting of said metal surface with said solution induces a spontaneous chemical reaction leading to growth of the charge-transfer complex salt M + A − .
6. A method according to claim 5 , wherein:
the electron acceptor molecule A is 7,7,8,8-tetracyanoquinodimethane;
7,7,8,8-tetracyanoquinodimethane is soluble in the co-solvent, and Cu + TCNQ − is not soluble in the co-solvent; and
the salt additive is selected from the group consisting of Cu + Y − and E + TCNQ − , wherein Y − and E + are non-reactive counter-ions.