Electrochemical processing apparatus and method of processing a semiconductor device
An electrochemical processing apparatus is provided, in which a substrate and an anode placed in a chamber are partitioned into a cathode region including the substrate and an anode region including the anode by placing a multi-layered structure of a filtration film and a cation exchange film so that the filtration film is positioned on the substrate side. A plating solution containing additives is introduced into the cathode region, whereby a substrate is plated.
1 . An electrochemical processing apparatus, comprising:
a chamber; and
a multi-layered structure provided to partition the chamber into an anode region and a cathode region, said structure including a filtration film facing said cathode region and a cation exchange film facing said anode region.
2 . The apparatus according to claim 1 , wherein the filtration film and the cation exchange film are provided in contact with each other.
3 . The apparatus according to claim 1 , wherein the filtration film has a hole diameter of 0.5 μm or less.
4 . The apparatus according to claim 1 , wherein:
the chamber has a plating solution containing a leveler, an accelerator, and a suppressor introduced into the cathode region; and
the multi-layered structure is configured to suppress transmission of the accelerator, the leveler, and the suppressor.
5 . The apparatus according to claim 1 , wherein the anode is made of copper.
6 . The apparatus according to claim 5 , wherein the multi-layered structure is configured to allow transmission of copper ions.
7 . A chamber including an anode and a cathode, a filtration film provided in the chamber between the anode and the cathode, and
a cation exchange film provided in the chamber between the
8 . The chamber according to claim 7 , the cathode is a filtration film and the anode.
semiconductor wafer.
9 . A method of plating a conductive film by use of an electrochemical processing apparatus which includes a chamber with an anode, a cathode, a filtration film between the anode and the cathode and a cation exchange film between the filtration film and the anode, the method comprising plating a semiconductor substrate into the chamber as the cathode,
applying an electric power between the anode and the semiconductor substrate to plate a conductive film on the semiconductor substrate.
10 . The method according to claim 9 , further comprising introducing a plating solution containing a leveler, an accelerator, and a suppressor into the chamber.
11 . The method according to claim 10 , wherein the anode comprising a copper so that a copper film is plated on the semiconductor substrate.