Semiconductor device and method for manufacturing the same
View Patent ↗After a semiconductor chip is cut out, an In-10 atom % Ag pellet is placed on a metal film. Next, an epoxy sheet on a stiffener is stuck to a ceramic substrate. At this time, the In alloy pellet is sandwiched between a central protrusion portion and the metal film. Then, an In alloy film is formed from the In alloy pellet by heating, melting, and then cooling the In alloy pellet. As a result, the semiconductor chip and a heat spreader are bonded via the metal film and the In alloy film.
1. A semiconductor device comprising:
a semiconductor chip;
a substrate mounting said semiconductor chip;
a heat diffusion member arranged over said semiconductor chip and said substrate, said semiconductor chip and said heat diffusion member being bonded with an In alloy film; and
a metal film located between said In alloy film and said semiconductor chip,
wherein said metal film includes an alloy film composed of two or more kinds of elements selected from a group consisting of Ti, Ni, Pd, V, and Ag, and the In alloy film includes an alloy film composed of the two or more kinds of the elements included in the metal film;
wherein a thickness of said In alloy film is 0.1 mm to 0.8 mm.
2. The semiconductor device according to claim 1 , wherein said In alloy film contains at least one kind of element selected from a group consisting of Sn, Pb, Ag, and Bi.
3. The semiconductor device according to claim 1 , wherein a ratio of elements other than In in said In alloy film is 0.1 atom % to 20 atom %.
4. The semiconductor device according to claim 1 , wherein said In alloy film contains Ag of 5 atom % to 20 atom %.
5. The semiconductor device according to claim 1 , wherein a thermal conductivity of said heat diffusion member is equal to or more than 2 (W·cm −1 ·k −1 ).
6. The semiconductor device according to claim 1 , wherein said heat diffusion member is bonded to said substrate via a resin.