Semiconductor device and method of manufacturing the same

1 . A semiconductor device, comprising:

a semiconductor package which has a semiconductor chip including a low dielectric constant film and a bump which includes lead free solder;

a wiring substrate over which flip chip junction of the semiconductor package was done via the bump; and

under-filling resin with which a gap between the semiconductor package and the wiring substrate is filled up;

wherein

as for the under-filling resin, glass transition temperature is equal to or more than 125° C., coefficient of thermal expansion in 125° C. is less than 40 ppm/° C., and elastic modulus in 25° C. is less than 9 GPa.

2 . A semiconductor device according to claim 1 , wherein

elastic modulus in 125° C. of the under-filling resin is 0.1 GPa or more.

3 . A semiconductor device, comprising:

a semiconductor package which has a semiconductor chip and a porosity elastomer to which the semiconductor chip is attached and which is exposed from a package side surface;

a wiring substrate to which the semiconductor package is joined via a solder ball; and

under-filling resin with which between the semiconductor package and the wiring substrate is filled up;

wherein

the under-filling resin is filled up with so that at least a part of exposed part of the porosity elastomer remains exposed.

4 . A method of manufacturing the semiconductor device according to claim 3 , wherein

a nozzle for pouring in the under-filling resin is lowered rather than an exposed part of the porosity elastomer, and the under-filling resin is poured in between the semiconductor package and the wiring substrate.

5 . A semiconductor device, comprising:

a semiconductor package which has a semiconductor chip and mold resin exposed to a ball surface side;

a wiring substrate over which the semiconductor package was joined via a solder ball; and

under-filling resin with which a gap between the semiconductor package and the wiring substrate is filled up;

wherein

the under-filling resin does not touch the mold resin exposed to the ball surface side.

6 . A method of manufacturing the semiconductor device according to claim 3 , comprising the steps of

applying under-filling resin over the wiring substrate; and

doing flip chip junction of the semiconductor package over the wiring substrate via the under-filling resin applied over the wiring substrate.

7 . A method of manufacturing the semiconductor device according to claim 3 , wherein

only from one point or several points of a periphery of the semiconductor package, the under-filling resin is poured in between the semiconductor package and the wiring substrate.

8 . A semiconductor device, comprising:

a wiring substrate;

a first semiconductor element mounted over the wiring substrate;

a second semiconductor element that is mounted over the wiring substrate and whose height is lower than the first semiconductor element;

a metal plate formed over the second semiconductor element so that an upper surface might become the same height as an upper surface of the first semiconductor element; and

a case adhered to an upper surface of the first semiconductor element, and an upper surface of the metal plate.

9 . A semiconductor device, comprising:

a semiconductor package which has a semiconductor chip including a low dielectric constant film and a bump which includes lead free solder;

a wiring substrate over which flip chip junction of the semiconductor package is done via the bump; and

under-filling resin with which a gap between the semiconductor package and the wiring substrate is filled up;

wherein

the under-filling resin is 0.1 GPa or more in elastic modulus in 125° C., and is less than 9 GPa in elastic modulus in 25° C.

10 . A semiconductor device according to claim 9 , wherein

glass transition temperature of the under-filling resin is more than or equal to 125° C.