Method of producing semiconductor device and semiconductor device
View Patent ↗A method of producing a semiconductor device which can reliably perform conductor filling to form a through hole electrode by a simple method is provided. A method of producing a semiconductor device of the present invention includes the steps of thinning a substrate from its back side in a state in which a first supporting body is attached to the front side of the substrate, removing the first supporting body from the substrate and attaching a second supporting body having an opening to the back side of the substrate, forming a through hole communicating with the opening of the second supporting body in the substrate before or after attaching the second supporting body, forming an insulating film within the through hole, and filling a conductor into the through hole of the substrate.
1. A semiconductor device, comprising:
a circuit component portion formed on a front side of a substrate;
a through hole piercing the substrate and the circuit component portion;
an insulating film formed on a side face of the through hole and on a front side of the circuit component portion; and
a conductive layer filled in the through hole to extend from a backside of the substrate to the front side of the circuit component portion,
wherein the conductive layer and the insulating film protrude from a backside of the semiconductor device so as to insulate the conductive layer from other areas of the backside of the semiconductor device.
2. The device of claim 1 , wherein the substrate has a thickness of 30 to 100 μm.
3. The device of claim 1 , wherein the conductive layer is made of a conductor seed layer and a conductor filled by an electrolytic plating method using this seed layer.
4. The device of claim 3 , wherein the conductor seed layer has a thickness between a thickness of a monoatomic layer and 200 nm.
5. The device of claim 3 , wherein the conductor seed layer is formed within the through hole via a barrier layer.
6. The device of claim 5 , wherein the barrier layer is made of TiN or TaN.
7. The device of claim 1 , wherein the circuit component portion comprises a wiring layer inside, the through hole is formed so as to expose the wiring layer, and the conductive layer is formed so as to be connected to the wiring layer.
8. The device of claim 1 , wherein the conductive layer protrudes from the backside of the substrate to a larger extent than the insulating film formed on the side face of the through hole.
9. A lamination semiconductor device, comprising:
an interposer having a bump ball on the backside and a through-hole electrode inside; and
a plurality of semiconductor devices laminated on the interposer;
wherein the plurality of semiconductor devices are the devices of claim 1 .
10. The device of claim 1 , wherein a diameter of the through hole formed in the substrate and the circuit component portion is constant throughout an entire depth of the substrate and the circuit component portion.
11. The device of claim 1 , wherein the insulating film is not formed on the backside of the substrate.
12. The device of claim 1 , wherein the front sides of the conductive layer and the insulating film are coplanar.
13. The device of claim 1 , wherein the insulating film on the side face of the through hole contacts the circuit component portion and the substrate.
14. A semiconductor device, comprising:
a circuit component portion formed on a front side of a substrate;
a through hole piercing the substrate and the circuit component portion;
a groove formed on a backside of the substrate, elongated in parallel with the backside, and communicating with the through hole;
an insulating film formed on a side face of the through hole, on a front side of the circuit component portion and on an inner face of the groove;
a conductive layer filled in the through hole to extend from the backside of the substrate to the front side of the circuit component portion; and
an elongated groove wiring filled in the groove.
15. The device of claim 14 , wherein backsides of the substrate and the groove wiring are coplanar.
16. The device of claim 14 , wherein the insulating film is not formed on the backside of the substrate outside of the groove wiring.
17. The device of claim 14 , wherein the front sides of the conductive layer and the insulating film are coplanar.
18. The device of claim 14 , wherein the elongated groove wiring is rectangular in shape.
19. The device of claim 14 , wherein the insulating film on the side face of the through hole contacts the circuit component portion and the substrate.