Method of fabricating organic silicon film, semiconductor device including the same, and method of fabricating the semiconductor device
View Patent ↗An organic silicon film is formed by carrying out chemical vapor deposition with organic silicon compound being used as a raw material gas. The organic silicon compound contains at least silicon, hydrogen and carbon as a constituent thereof, and contains two or more groups having unsaturated bond, per a molecule thereof. The organic silicon compound is used in mixture with a silicon hydride gas.
1. A method of fabricating an organic silicon film by carrying out chemical vapor deposition with organic silicon compound being used as a raw material gas,
said organic silicon compound containing at least silicon, hydrogen and carbon as a constituent thereof, and containing two or more groups having unsaturated bond, per a molecule thereof,
said organic silicon compound being used in mixture with a silicon hydride gas, wherein said organic silicon compound is expressed with the formula (IA) or (IB), and at least two of the groups R 1 to R 4 shown in the formula (IA) is any one of the groups expressed with the formulas (i-12) to (i-21), or at least two of the groups R 11 to R 14 shown in the formula (IB) is any one of the groups expressed with the formulas (i-1) to (i-21),
2. The method as set forth in claim 1 , wherein said silicon hydride gas is comprised of any one of mono-silane gas, disilane gas, a mixture gas of mono-silane gas and disilane gas.
3. The method as set forth in claim 1 , wherein said organic silicon film does not contain oxygen atoms.
4. The method as set forth in claim 1 , wherein said chemical vapor deposition is comprised of plasma-enhanced chemical vapor deposition.