Semiconductor device and method for fabricating the same

1. A method for fabricating a semiconductor device, comprising the steps of:

forming a plurality of cell-selecting transistors in a semiconductor substrate;

forming bit lines, which are electrically connected with the cell-selecting transistors, over the semiconductor substrate;

forming an insulative lower hydrogen-barrier film over the bit lines;

forming a plurality of first contact plugs, which pass through the insulative lower hydrogen-barrier film to reach the cell-selecting transistors;

selectively forming a plurality of conductive lower hydrogen-barrier films on, and in contact with, the insulative lower hydrogen-barrier film so that the conductive lower hydrogen-barrier films cover the upper faces of the first contact plugs;

forming capacitor rows over the conductive lower hydrogen-barrier films, the capacitor rows including a plurality of capacitors each having a capacitive insulating film made of a ferroelectric material or a high dielectric material; and

forming an upper hydrogen-barrier film over the capacitor rows,

wherein the upper-hydrogen-barrier-film formation step includes the step of forming the upper hydrogen-barrier film in such a manner that the upper hydrogen-barrier film is in contact with the insulative lower hydrogen-barrier film where the insulative lower hydrogen-barrier film is located outside the capacitor rows.

2. The method of claim 1 , further comprising, after the upper-hydrogen-barrier-film formation step, the steps of:

forming an interlayer dielectric film over the entire surface of the semiconductor substrate as well as on the upper hydrogen-barrier film;

forming second contact plugs, which are connected to the bit lines, in portions in the interlayer dielectric film that are located outside the region where the upper hydrogen-barrier film has been formed; and

forming interconnects, which are in contact with the second contact plugs, on the interlayer dielectric film.

3. The method of claim 2 , wherein the step of forming the second contact plugs in the interlayer dielectric film includes the steps of:

forming a lower interlayer dielectric film on the upper hydrogen-barrier film, and then forming a lower contact plug in the lower interlayer dielectric film, and

forming an upper interlayer dielectric film on the lower interlayer dielectric film, and then forming an upper contact plug, which is connected to the lower contact plug, in the upper interlayer dielectric film.

4. The method of claim 1 , wherein in the insulative-lower-hydrogen-barrier-film formation step, the insulative lower hydrogen-barrier film is formed directly on the bit lines.

5. The method of claim 1 , wherein a lower electrode, the capacitive insulating film, and an upper electrode in each said capacitor have a cross section of a recess, and the lateral faces of each said recess are tapered and flare upward.

6. The method of claim 1 , wherein in the upper-hydrogen-barrier-film formation step, the upper hydrogen-barrier film is formed directly on upper electrodes.

7. The method of claim 1 , further comprising the step of forming interconnects directly on the upper hydrogen-barrier film, after the upper-hydrogen-barrier-film formation step is performed.

8. The method of claim 1 , wherein the capacitor-row formation step includes the step of connecting upper electrodes of the capacitors with each other so that the upper electrodes form a cell plate, and electrically connecting an upper electrode and a lower electrode in one capacitor connected to the cell plate, thereby making said one capacitor be a conducting dummy capacitor whose upper and lower electrodes are electrically connected with each other.