Phase-change memory element
A phase-change memory element. The phase-change memory element comprises a first electrode and a second electrode. A first phase change layer is electrically coupled to the first electrode. A second phase change layer is electrically coupled to the second electrode. A conductive bridge is formed between and electrically coupled to the first and second phase change layers.
1 . A phase-change memory element, comprising
a first electrode and a second electrode;
a first phase change layer electrically coupled to the first electrode;
a second phase change layer electrically coupled to the second electrode; and
a conductive bridge formed between and electrically coupled to the first and second phase change layers.
2 . The phase-change memory element as claimed in claim 1 , wherein the first and second electrodes respectively comprise Al, W, Mo, Ti, TiN, TiW or TaN.
3 . The phase-change memory element as claimed in claim 1 , wherein the conductive bridge comprises Al, W, Mo, Ti, TiN, TiW or TaN.
4 . The phase-change memory element as claimed in claim 1 , wherein the first and second phase change layers respectively comprise In, Ge, Sb, Te or combinations thereof.
5 . The phase-change memory element as claimed in claim 1 , wherein the first and second phase change layers respectively comprise GeTe, GeSb, SbTe, GeSbTe or InGeSbTe.
6 . The phase-change memory element as claimed in claim 1 , further comprising:
a first cross-section area formed by intersection of the first phase change layer and the conductive bridge; and
a second cross-section area formed by intersection of the second phase change layer and the conductive bridge.
7 . The phase-change memory element as claimed in claim 6 , wherein the dimensions of the first and second cross-section areas are the same.
8 . The phase-change memory element as claimed in claim 6 , wherein the dimensions of the first and second cross-section areas are different.
9 . The phase-change memory element as claimed in claim 6 , wherein at least one of the first and second cross-section areas has a dimension less than the resolution limit of photolithography process.
10 . The phase-change memory element as claimed in claim 1 , further comprising a dielectric layer with an opening, wherein the conductive bridge fills the opening.