Semiconductor device having a pseudo power supply wiring
View Patent ↗A semiconductor device includes main power supply wirings VDD and VSS, an pseudo power supply wiring VDT, inverters connected between the pseudo power supply wiring VDT and the main power supply wiring VSS, and inverters connected between the main power supply wiring VDD and the main power supply wiring VSS. Between the main power supply wiring VDD and the pseudo power supply wiring VDT, an N-channel MOS transistor and a P-channel MOS transistor that are rendered a conductive state at the time of active are connected in parallel. According to the present invention, the transistors different in conductivity type are used in parallel, and thus, it becomes possible to reduce power consumption at the time of standby while suppressing a decrease in switching speed from a standby state to an active state.
1. A semiconductor device comprising:
a main power supply wiring;
a pseudo power supply wiring;
a circuit block including a plurality of transistors, in which a source of at least one of the transistors that is fixed to turn off in a standby state is connected to the pseudo power supply wiring; and
first and second transistors connected in parallel between the main power supply wiring and the pseudo power supply wiring, turning on in an active state, and turning off in a standby state,
wherein:
the first transistor has a first conductivity type;
the second transistor has a second conductivity type different from the first conductivity type; and
a source of at least one of the transistors included in the circuit block that is fixed to turn on in the standby state is connected to the main power supply wiring.
2. The semiconductor device as claimed in claim 1 , wherein the second transistor has a gate-to-source voltage being applied a reverse bias in the standby state, and the second transistor has a drive capability larger than the first transistor.
3. The semiconductor device as claimed in claim 2 , wherein a drive capability of the first transistor is set below a drive capability sufficient for operating the circuit block.
4. The semiconductor device as claimed in claim 3 , wherein the drive capability of the first transistor is set to a drive capability enough for recharging a wiring capacitance of the pseudo power supply wiring.
5. The semiconductor device as claimed in claim 1 , wherein:
the main power supply wiring includes a first main power supply wiring to which a relatively high potential is supplied and a second main power supply wiring to which a relatively low potential is supplied,
the pseudo power supply wiring includes a first pseudo power supply wiring that corresponds to the first main power supply wiring and a second pseudo power supply wiring that corresponds to the second main power supply wiring,
the first transistor includes a first N-channel MOS transistor connected between the first main power supply wiring and the first pseudo power supply wiring, and a second N-channel MOS transistor connected between the second main power supply wiring and the second pseudo power supply wiring,
the second transistor includes a first P-channel MOS transistor connected between the first main power supply wiring and the first pseudo power supply wiring, and a second P-channel MOS transistor connected between the second main power supply wiring and the second pseudo power supply wiring, and
the plurality of transistors included in the circuit block are divided into a first portion and a second portion, the transistors belonging to the first portion is connected between the first main power supply wiring and the second pseudo power supply wiring, the transistors belonging to the second portion is connected between the second main power supply wiring and the first pseudo power supply wiring.
6. The semiconductor device as claimed in claim 5 , wherein the first N-channel MOS transistor and the second P-channel MOS transistor are applied a reverse bias to a gate-to-source voltage in the standby state.
7. The semiconductor device as claimed in claim 5 , wherein the first N-channel MOS transistor has a drive capability larger than that of the first P-channel MOS transistor, and the second P-channel MOS transistor has a drive capability larger than that of the second N-channel MOS transistor.
8. The semiconductor device as claimed in claim 1 , wherein the pseudo power supply wiring is divided into a first portion that supplies electricity relatively to a preceding-stage unit of the circuit block and a second portion that supplies electricity relatively to a succeeding-stage unit of the circuit block, and the first transistor and the second transistor are connected in parallel between the main power supply wiring and the first portion of the pseudo power supply wiring.
9. The semiconductor device as claimed in claim 8 , wherein between the main power supply wiring and the second portion of the pseudo power supply wiring, either one of another first transistor or another second transistor is arranged.
10. The semiconductor device as claimed in claim 1 , wherein:
the first and second transistors turn on in order in response to changing from a standby state to an active state; and
a drive capability of the second transistor is larger than that of the first transistor.
11. A semiconductor device comprising:
a main power supply wiring;
a pseudo power supply wiring;
a circuit block including a plurality of transistors, in which a source of at least one of the transistors that is fixed to turn off in a standby state is connected to the pseudo power supply wiring; and
first and second transistors connected in parallel between the main power supply wiring and the pseudo power supply wiring;
wherein:
the first transistor has a first conductivity type;
the second transistor has a second conductivity type different from the first conductivity type;
a source of at least one of the transistors included in the circuit block that is fixed to turn on in the standby state is connected to the main power supply wiring; and
the first and second transistors receive different phase signals from each other.
12. The semiconductor device as claimed in claim 11 , wherein an amplitude of the signal supplied to the first transistor and an amplitude of the signal supplied to the second transistor differ from each other.
13. The semiconductor device as claimed in claim 11 , further comprising a level conversion circuit that converts a level of the signal to be supplied to one of the first transistor and the second transistor.
14. A semiconductor device comprising:
a main power supply wiring;
a pseudo power supply wiring;
a logical gate circuit comprising a first power node and a second power node; and
first and second transistors connected in parallel between the main power supply wiring and the pseudo power supply wiring,
wherein:
the first power node is connected to the pseudo power supply wiring, and the second power node is connected to the main power supply wiring,
the first and second transistors turn on in order in response to changing from a standby state to an active state,
a conductivity type of the first transistor and that of the second transistor differ from each other, and
a drive capability of the second transistor is larger than that of the first transistor.
15. The semiconductor device as claimed in claim 14 , further comprising a level conversion circuit that reverse-biases the second transistor in the standby state.