Semiconductor device and manufacturing method thereof
View Patent ↗When forming a silicon nitride film to protect and insulate a surface on which a silicon substrate has been ground or polishing, by use of a mixed gas containing SiH 4 , N 2 , and NH 3 as a reaction gas, a film is formed by a single-frequency parallel-plate plasma CVD method. Thereby, even when the film forming temperature is made not more than an allowable temperature limit of an adhesive to adhere a support (for example, approximately 100° C. or less, which is an allowable temperature limit when the adhesive is an ultraviolet curing resin), a high-quality film without exfoliation in a CMP step of the following step and with less leakage can be formed. This high-quality film is, if being prescribed by a refractive index, a film whose refractive index with respect to a wavelength of 633 nm is approximately 1.8 through 1.9.
1. A method for forming silicon insulating film, on a front surface of a semiconductor substrate, comprising:
forming, on the front surface of the semiconductor substrate, a silicon nitride film by a single-frequency parallel-plate plasma CVD method by use of a mixed gas comprising SiH 4 , NH 3 , and N 2 as a film forming gas.
2. A method for manufacturing a semiconductor device comprising the steps of:
forming, on one surface of a semiconductor substrate, a conductive plug;
fixing, to said one surface of the semiconductor substrate, a support member by use of an adhesive;
one of grinding and polishing an other surface of the semiconductor substrate until the conductive plug is protruded;
forming, on said other surface of the semiconductor substrate, a silicon nitride film, said silicon nitride film having a film forming temperature less than or equal to an allowable temperature limit of the adhesive for fixing the support member;
removing said silicon nitride film on a front surface of said conductive plug; and
detaching the support member from the semiconductor substrate.
3. The method for manufacturing a semiconductor device as set forth in claim 2 , wherein said forming said conductive plug comprises the steps of:
forming a hole with a predetermined depth on said one surface of said semiconductor substrate; and
forming said conductive plug by burying a conductive material via an insulating film inside said hole.
4. The method for manufacturing a semiconductor device as set forth in claim 2 , wherein the film forming temperature of said silicon nitride film is a temperature less than or equal to approximately 100° C.
5. The method for manufacturing a semiconductor device as set forth in claim 2 , wherein said silicon nitride film is formed by a single-frequency parallel-plate plasma CVD method by use of a mixed gas comprising SiH 4 , NH 3 , and N 2 as a film forming gas.
6. The method for manufacturing a semiconductor device as set forth in claim 3 , wherein said silicon nitride film is formed by a single-frequency parallel-plate plasma CVD method by use of a mixed gas comprising SiH 4 , NH 3 , and N 2 as a film forming gas.
7. The method for forming a silicon insulating film as set forth in claim 1 , wherein a film forming temperature of said silicon nitride film is a temperature less than or equal to approximately 100° C.
8. The method for forming the silicon insulating film according to claim 1 , further comprising:
one of grinding and polishing said front surface of the semiconductor substrate until a conductive plug is protruded.
9. The method for forming the silicon insulating film according to claim 1 , further comprising:
forming said silicon nitride on the front surface; and
removing said silicon nitride film on a front surface of a conductive plug.
10. The method for forming the silicon insulating film according to claim 1 , further comprising:
one of grinding and polishing said front surface of the semiconductor substrate until a conductive plug is protruded;
forming said silicon nitride on the front surface; and
removing said silicon nitride film on a front surface of the conductive plug.
11. The method for forming the silicon insulating film according to claim 1 , further comprising:
forming wiring inside the semiconductor substrate and on said front surface.
12. The method for forming the silicon insulating film according to claim 1 , further comprising:
forming a hole with a predetermined depth on an other surface of said semiconductor substrate that said front surface; and
forming a conductive plug by burying a conductive material via an insulating film inside said hole.
13. A method of manufacturing a semiconductor device comprising:
forming a conductive plug on a first surface of a semiconductor substrate;
using an adhesive to fix a support member to said first surface of the semiconductor substrate;
one of grinding and polishing a second surface of the semiconductor substrate until the conductive plug protrudes from the second surface;
forming a silicon nitride film on the second surface, said silicon nitride film having a film forming temperature of less than or equal to an allowable temperature limit of the adhesive for fixing the support member;
removing said silicon nitride film on a front surface of the conductive plug; and
detaching the support member from the semiconductor substrate.
14. The method of manufacturing a semiconductor device as set forth in claim 13 , wherein said forming said conductive plug comprises:
forming a hole with a predetermined depth on said first surface of said semiconductor substrate; and
forming said conductive plug by burying a conductive material via an insulation film inside said hole.
15. The method of manufacturing a semiconductor device as set forth in claim 13 , wherein the film forming temperature of said silicon nitride film is a temperature less than or equal to approximately 100° C.
16. The method of manufacturing a semiconductor device as set forth in claim 13 , wherein said silicon nitride film is formed by a single-frequency parallel-plate plasma CVD method using a film forming gas mixture comprising SiH 4 , NH 3 , and N 2 .
17. The method of manufacturing a semiconductor device as set forth in claim 14 , wherein said silicon nitride film is formed by a single-frequency parallel-plate plasma CVD method using a film forming gas mixture comprising SiH 4 , NH 3 , and N 2 .
18. The method of forming the silicon insulating film according to claim 1 , wherein a single frequency in the single-frequency parallel-plate plasma CVD method is greater than 1 MHz.