ZnSe scintillators
The present invention relates to a microcolumnar zinc selenide (ZnSe) scintillator and uses thereof, and methods of fabrication of microcolumnar scintillators using sublimation-based deposition techniques. In one embodiment, the present invention includes a scintillator including a microcolumnar scintillator material including zinc selenide (ZnSe) and a dopant. The microcolumnar scintillators of the present invention provide improved light channeling and resolution characteristics, thereby providing high spatial resolution, highly efficient scintillators.
1. A scintillator comprising, a microcolumnar scintillator material comprising zinc selenide and a dopant.
2. The scintillator of claim 1 , wherein the dopant comprises Te, O, or Cu.
3. The scintillator of claim 1 , wherein the microcolumnar scintillator material comprises a thickness of about 25 μm to about 85 μm.
4. The scintillator of claim 1 , wherein the microcolumnar scintillator material comprises microcolumns of about 200 nanometers to about 20 μm in diameter.
5. The scintillator of claim 1 , wherein the scintillator is a high spatial resolution scintillator.
6. The scintillator of claim 5 , the scintillator having an imaging spatial resolution better than about 100 μm.
7. The scintillator of claim 5 , the scintillator having an imaging spatial resolution better than about 50 μm.
8. The scintillator of claim 1 , the scintillator comprising a light output of greater than about 30,000 photons/MeV.
9. The scintillator of claim 1 , wherein the microcolumnar scintillator material comprises a sublimation-deposited microcolumnar zinc selenide material doped with Te.
10. A method of fabricating a microcolumnar scintillator, comprising:
co-sublimating a first material comprising ZnSe and a second material comprising a Zn-dopant salt so as to form a microcolumnar scintillator material layer deposited on a substrate; and
annealing the microcolumnar scintillator in a zinc-containing atmosphere.
11. The method of claim 10 , wherein the dopant is selected from Te, O, or Cu.
12. The method of claim 10 , wherein the co-sublimating comprises applying independently controlled temperature gradients to each of the first material and the second material so as to maintain substantially constant rates of sublimation of the first and second materials.
13. The method of claim 12 , wherein an applied temperature gradient comprises applied temperatures ranging from about 850 degrees C. to about 1050 degrees C. during deposition.
14. The method of claim 10 , wherein the zinc-containing atmosphere comprises a pressure of about one to about three atmospheres.
15. A method of fabricating a microcolumnar scintillator, comprising:
providing a first boat comprising a first source material and a second boat comprising a second source material;
forming a microcolumnar scintillator deposited on a substrate, the forming comprising applying independently controlled temperature gradients to each of the first material and the second material so as to maintain substantially constant rates of material sublimation and deposition on the substrate; and
annealing the microcolumnar scintillator deposited on the substrate.
16. The method of claim 15 , wherein the first source material comprises ZnSe and the second source material comprises a zinc-dopant salt.
17. The method of claim 16 , wherein the dopant comprises Te, O, or Cu.
18. The method of claim 15 , at least one of the first and second boats further comprising a collimator.
19. The method of claim 15 , wherein the temperature gradient applied to a boat is selected to produce a sublimation rate while accounting during a decrease of surface area of a source material of the boat.
20. The method of claim 15 , wherein an applied temperature gradient is controlled by an open-loop mechanism.
21. The method of claim 15 , wherein an applied temperature gradient is controlled by a closed-loop mechanism.
22. The method of claim 16 , the annealing comprising annealing in a zinc atmosphere.
23. A radiation detection device comprising a scintillator comprising a doped zinc selenide microcolumnar scintillator material formed on a substrate; and a photodetector assembly optically coupled to the scintillator.
24. The radiation detection device of claim 23 , wherein the dopant comprises Te, O, or Cu.
25. The radiation detection device of claim 23 , wherein the device is an imaging device.
26. The radiation detection device of claim 25 , further comprising an X-ray source.
27. The radiation detection device of claim 26 , wherein the device is an X-ray computed tomography (CT) imaging device.
28. The radiation detection device of claim 26 , wherein the device is a time-resolved X-ray diffraction imaging device.
29. The radiation detection device of claim 25 , further comprising electronics coupled to the photodetector assembly so as to output image data in response to radiation detected by the scintillator.
30. The radiation detection device of claim 23 , wherein the photodetector assembly comprises a charge coupled device (CCD), an electron-multiplied CCD, a photomultiplier tube, a photodiode, a PIN detector, or an avalanche photodiode detector.
31. A method of performing radiation detection, comprising:
providing a detector device comprising a scintillator comprising a doped zinc selenide microcolumnar scintillator material formed on a substrate; and a photodetector assembly optically coupled to the scintillator; and
positioning a radiation source within a field of view of the scintillator so as to detect emissions from the radiation source.
32. The method of claim 31 , wherein the emission comprise X-ray emissions.
33. A scintillator comprising, a microcolumnar scintillator material comprising zinc selenide and a dopant, the scintillator formed by a process comprising co-sublimating a first material comprising ZnSc and a second material comprising a Zn-dopant salt so as to form a microcolumnar scintillator material layer deposited on a substrate, and annealing the microcolumnar scintillator in a zinc-containing atmosphere.