Temperature detection circuit
View Patent ↗A temperature detection circuit according to the present invention includes a potential generating part and a temperature detection part. The potential generating part generates a potential according to an environmental temperature, and the temperature detection part detects a temperature based on a detection potential generated in the potential generated part. The temperature detection part is a resistive load type inverter circuit that outputs a detection signal when the generated potential reaches a threshold voltage. The potential generating part applies the detection potential to the inverter circuit through a temperature sensor including cascaded diodes and an NchMOSFET. The threshold voltage of the inverter circuit is determined based on the NchMOSFET in the inverter circuit, and the NchMOSFET is a MOSFET having the same characteristic as the NchMOSFET of the potential generating part.
1. A temperature detection circuit, comprising:
a first circuit generating a detection voltage corresponding to a detection temperature, the first circuit including a first transistor having a gate thereof connected to a drain thereof; and
a second circuit outputting an output signal based on the detection voltage, the second circuit including a second transistor having the detection voltage is applied to a gate thereof,
wherein the first and the second transistors have substantially a same threshold voltage to each other,
wherein the first circuit further includes a diode that has a first node and a second node, the first node of the diode is directly connected to the gate of the second transistor, and the second node of the diode is directly connected to the gate and the drain of the first transistor.
2. The temperature detection circuit according to claim 1 , wherein the diode is part of a series of cascaded diodes.
3. A temperature detection circuit, comprising:
a first circuit generating a detection voltage corresponding to a detection temperature, the first circuit including a first transistor having a gate thereof connected to a drain thereof; and
a second circuit outputting an output signal based on the detection voltage, the second circuit including a second transistor having the detection voltage is applied to a gate thereof,
wherein the first and the second transistors have substantially a same threshold voltage to each other,
wherein the first circuit further includes a diode that has a first node and a second node, the first node of the diode is connected to the gate of the second transistor, and the second node of the diode is connected to the gate and the drain of the first transistor, and
wherein the first circuit further comprises a constant current circuit connected in series with the diode.
4. The temperature detection circuit according to claim 1 , wherein the first and second transistors are formed having a same design.
5. The temperature detection circuit according to claim 1 , wherein the first and second transistors are N-channel MOSFETs.
6. The temperature detection circuit according to claim 3 , wherein the first and second circuits are connected between a circuit power source line and a circuit ground line, and both sources of the first and second transistors are connected to the circuit ground line.
7. The temperature detection circuit according to claim 1 , wherein the second circuit is a resistive load inverter circuit.
8. The temperature detection circuit according to claim 1 , wherein the second circuit is a constant-current load inverter circuit.
9. A temperature detection circuit, comprising:
a first circuit generating a detection voltage corresponding to a detection temperature, the first circuit including a first transistor having a gate thereof connected to a drain thereof, a diode connected to the gate and the drain, and a constant current circuit connected in series with the diode; and
a second circuit outputting an output signal based on the detection voltage, the second circuit including a second transistor having the detection voltage is applied to a gate thereof,
wherein the first and the second transistors have substantially a same threshold voltage to each other.