Semiconductor device and method for manufacturing same
View Patent ↗A semiconductor device comprises a drift region of a first conduction type, a base region of a second conduction type, a source region of the first conduction type, a contact hole, a column region of the second conduction type, a plug and wiring. The drift region formed on a semiconductor substrate of the first conduction type. The base region of a second is formed in a prescribed region of the surface of the drift region. The source region is formed in a prescribed region of the surface of the base region. The contact hole extends from the source region surface side to the base region. The column region is formed in the drift region below the contact hole. The plug comprises a first conductive material and fills the contact hole. The wiring comprises a second conductive material and is electrically connected to the plug.
1. A method for manufacturing a semiconductor device, comprising:
forming a drift region of a first conduction type on a semiconductor substrate;
forming a base region of a second conduction type in a prescribed region of the drift region;
forming a source region of the first conduction type in a prescribed region of the base region;
forming a contact hole in the base region;
forming a column region of the second conduction type in the drift region below the contact hole;
filling the contact hole with a plug of a conductive material; and
forming a wiring comprising a conductive material and electrically connected to the plug.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the filling of the contact hole with a plug comprises forming a conductive film on the entire surface including the contact hole, and removing a prescribed thickness of the conductive film by anisotropic etching, so that the conductive material remains in the contact hole.
3. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
forming a gate insulating film over the drift region;
forming a gate electrode layer on the gate insulating film; and
removing by selective etching a portion of the gate electrode layer and the gate insulating film.
4. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
forming a trench portion in the drift region;
forming a gate electrode layer in the trench portion with a gate insulating film intervening; and
removing by selective etching a portion of the gate electrode layer and the gate insulating film.
5. The method for manufacturing a semiconductor device according to claim 1 ,
wherein forming the column region comprises implanting an impurity of the second conductivity type to the drift region through the contact hole.
6. The method for manufacturing a semiconductor device according claim 1 , wherein the plug connects to the base region at a bottom of the plug.
7. The method for manufacturing a semiconductor device according claim 1 , wherein the conductive material of the plug comprises tungsten.
8. The method for manufacturing a semiconductor device according claim 1 , wherein the conductive material of the wiring comprises aluminum.