Driving device of voltage drive type semiconductor device
A driving device of an IGBT includes a high potential side switch device group having a plurality of switch devices and, one end of each switch device being connected to a high potential side; a low potential side switch device group having a plurality of switch devices and, one end of each switch device being connected to a low potential side; an drive type selective input terminal to which a drive type selection signal corresponding to drive type of the IGBT connected to the driving device is inputted; a direct drive type control unit and an indirect drive type control unit generating a control signal controlling complementarily the high potential side switch device group and the low potential side switch device group corresponding to the drive type of the IGBT; and a selector selecting the control signal controlling the high potential side switch device group and the low potential side switch device group corresponding to an inputted drive type selection signal.
1. A driving device of a voltage drive type semiconductor device comprising:
a high potential side switch device group having a plurality of switch devices, one of ends of each switch device being connected to a high potential side;
a low potential side switch device group having a plurality of switch devices, one of ends of each switch device being connected to a low potential side;
a direct drive type control unit generating a control signal of direct drive type in the case of using the driving device in direct drive type that an output of the driving device is inputted to the voltage drive type semiconductor device without interposing any external switch device so as to drive the voltage drive type semiconductor device;
an indirect drive type control unit generating a control signal of indirect drive type in the case of using the driving device in indirect drive type that an output of the driving device is inputted to the voltage drive type semiconductor device through an external switch device so as to drive the voltage drive type semiconductor device;
a selector selecting one of the control signal from the direct drive type control unit and the control signal from the indirect drive type control unit and inputting it to the high potential side switch device group and the low potential side switch device group complementally;
a first input means inputting an on/off signal of the driving device to the direct drive type control unit and the indirect drive type control unit; and
a second input means inputting a drive type selection signal, for driving the driving device in either of direct drive type and indirect drive type, to the direct drive type control unit, the indirect drive type control unit and the selector.
2. The driving device as set forth in claim 1 , wherein each of the switch devices comprises a MOS transistor.