Semiconductor grain microstructures for photovoltaic cells
View Patent ↗Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy.
1. A photovoltaic cell, comprising:
one or more overlying electron-conducting layers each comprising one or more electron-conducting materials;
one or more overlying hole-conducting layers each comprising one or more hole-conducting materials;
one or more overlying photoactive conversion layers, each of the overlying photoactive conversion layers being disposed between the one or more overlying electron-conducting layers and the one or more overlying hole-conducting layers, each of the photoactive conversion layers comprising one or more distinct overlying semiconductor and oxide layers, each semiconductor and oxide layer comprising a multiplicity of semiconductor grains arranged in distinct oxide matrix, wherein each of the semiconductor grains is substantially columnar, wherein each of the semiconductor grains has a height substantially equal to that of a thickness of the respective distinct semiconductor and oxide layer, wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the semiconductor grains, and wherein each of the one or more overlying photoactive conversion layers comprises:
one or more overlying n-type semiconductor and oxide layers, each n-type semiconductor and oxide layer comprising a multiplicity of n-type semiconductor grains arranged in an oxide matrix, wherein each of the n-type semiconductor grains is substantially columnar, wherein each of the n-type semiconductor grains has a height substantially equal to that of a thickness of the respective n-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the n-type semiconductor grains; and/or
one or more overlying p-type semiconductor and oxide layers, each p-type semiconductor and oxide layer comprising a multiplicity of p-type semiconductor grains arranged in an oxide matrix, wherein each of the p-type semiconductor grains is substantially columnar, wherein each of the p-type semiconductor grains has a height substantially equal to that of a thickness of the respective p-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the p-type semiconductor grains; and
one or more metal and oxide layers, each of the one or more metal and oxide layers being disposed between the one or more overlying electron-conducting layers and the one or more overlying hole-conducting layers, each of the metal and oxide layers comprising a multiplicity of metallic grains arranged in an oxide matrix, wherein each of the metallic grains is substantially columnar, wherein each of the metallic grains has a height equal to that of a thickness of the respective metal and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the metallic grains.
2. The photovoltaic cell of claim 1 , wherein one or more of the metal and oxide layers are disposed between:
the one or more overlying n-type semiconductor and oxide layers and the one or more overlying p-type semiconductor and oxide layers within a respective photoactive conversion layer;
adjacent ones of the one or more photoactive conversion layers;
the one or more overlying electron-conducting layers and the one of the one or more photoactive conversion layers most closely disposed in proximity to the one or more overlying electron-conducting layers; and/or
the one or more overlying hole-conducting layers and the one of the one or more photoactive conversion layers most closely disposed in proximity to the one or more overlying hole-conducting layers.
3. The photovoltaic cell of claim 2 , wherein each of substantially most or all of the metallic semiconductor grains in one or more of the metal and oxide layers is in contact on one end with a p-type semiconductor grain from an adjacent p-type semiconductor and oxide layer.
4. The photovoltaic cell of claim 2 , wherein each of substantially most or all of the metallic semiconductor grains in one or more of the metal and oxide layers is in contact on one end with an n-type semiconductor grain from an adjacent n-type semiconductor and oxide layer.
5. A photovoltaic cell, comprising:
one or more overlying electron-conducting layers each comprising one or more electron-conducting materials;
one or more overlying hole-conducting layers each comprising one or more hole-conducting materials; and
one or more overlying photoactive conversion layers, each of the overlying photoactive conversion layers being disposed between the one or more overlying electron-conducting layers and the one or more overlying hole-conducting layers, each of the photoactive conversion layers comprising one or more distinct overlying semiconductor and oxide layers, each semiconductor and oxide layer comprising a multiplicity of semiconductor grains arranged in distinct oxide matrix, wherein each of the semiconductor grains is substantially columnar, wherein each of the semiconductor grains has a height substantially equal to that of a thickness of the respective distinct semiconductor and oxide layer, wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the semiconductor grains, and wherein each of the one or more overlying photoactive conversion layers comprises:
one or more overlying n-type semiconductor and oxide layers, each n-type semiconductor and oxide layer comprising a multiplicity of n-type semiconductor grains arranged in an oxide matrix, wherein each of the n-type semiconductor grains is substantially columnar, wherein each of the n-type semiconductor grains has a height substantially equal to that of a thickness of the respective n-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the n-type semiconductor grains; and/or
one or more overlying p-type semiconductor and oxide layers, each p-type semiconductor and oxide layer comprising a multiplicity of p-type semiconductor grains arranged in an oxide matrix, wherein each of the p-type semiconductor grains is substantially columnar, wherein each of the p-type semiconductor grains has a height substantially equal to that of a thickness of the respective p-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the p-type semiconductor grains; and
wherein there are a plurality of n-type semiconductor and oxide layers in each of one or more of the photoactive conversion layers, and wherein each of substantially most or all of the n-type semiconductor grains in one of the n-type semiconductor and oxide layers in a respective photoactive conversion layer is positioned over a corresponding n-type semiconductor grain in an immediately adjacent one of the n-type semiconductor and oxide layers in the respective photoactive conversion layer.
6. A photovoltaic cell, comprising:
one or more overlying electron-conducting layers each comprising one or more electron-conducting materials;
one or more overlying hole-conducting layers each comprising one or more hole-conducting materials; and
one or more overlying photoactive conversion layers, each of the overlying photoactive conversion layers being disposed between the one or more overlying electron-conducting layers and the one or more overlying hole-conducting layers, each of the photoactive conversion layers comprising one or more distinct overlying semiconductor and oxide layers, each semiconductor and oxide layer comprising a multiplicity of semiconductor grains arranged in distinct oxide matrix, wherein each of the semiconductor grains is substantially columnar, wherein each of the semiconductor grains has a height substantially equal to that of a thickness of the respective distinct semiconductor and oxide layer, wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the semiconductor grains, and wherein each of the one or more overlying photoactive conversion layers comprises:
one or more overlying n-type semiconductor and oxide layers, each n-type semiconductor and oxide layer comprising a multiplicity of n-type semiconductor grains arranged in an oxide matrix, wherein each of the n-type semiconductor grains is substantially columnar, wherein each of the n-type semiconductor grains has a height substantially equal to that of a thickness of the respective n-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the n-type semiconductor grains; and/or
one or more overlying p-type semiconductor and oxide layers, each p-type semiconductor and oxide layer comprising a multiplicity of p-type semiconductor grains arranged in an oxide matrix, wherein each of the p-type semiconductor grains is substantially columnar, wherein each of the p-type semiconductor grains has a height substantially equal to that of a thickness of the respective p-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the p-type semiconductor grains; and
wherein there are a plurality of p-type semiconductor and oxide layers in each of one or more of the photoactive conversion layers, and wherein each of substantially most or all of the p-type semiconductor grains in one of the p-type semiconductor and oxide layers in a respective photoactive conversion layer is positioned over a corresponding p-type semiconductor grain in an immediately adjacent one of the p-type semiconductor and oxide layers in the respective photoactive conversion layer.