IP Library › Granted Patent US 7,907,340
Granted Patent B2
US 7,907,340 · App. 11/924,640 · Granted Mar 15, 2011

Integrated narrow bandpass filter array and a method for fabrication thereof

Assignee: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
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Quick Facts
Patent No.
US 7,907,340
App. No.
11/924,640
Granted
Mar 15, 2011
Kind
B2
Abstract

Taught herein is an integragted narrow bandpass filter array and a method of its fabrication. The filter array is a Fabry-Perot type of filter array, wherein the pass band changes with the thickness of the spacer layer. The integrated filter array comprises a substrate, a lower mirror stack, a spacer array, and an upper mirror stack. The spacer array is an array of varied thicknesses formed using a combinatorial deposition technique. The spacer array is used to control the pass band of each mini-size narrow bandpass filter and realizes the integration of narrow bandpass filters with different pass bands on a single substrate. The merit of this technique lies in its fabrication efficiency and finished product rate which are much higher than for conventional methods. The filter array is completely matched with detector arrays and functional in most of the important optical ranges.

Claims (30)

1. A filter array comprising a plurality of narrow bandpass filters and integrated on a single substrate ( 1 ), each said narrow bandpass filter independently comprising a material having a structure of formula (LH) m xL(HL) m , wherein

(LH) m represents a lower mirror stack;

(HL) m represents an upper mirror stack;

xL represents a spacer layer;

H is a high refractive index layer;

L is a low refractive index layer;

m is the number of high and low refractive index layer pairs,

m≧2;

the optical thickness (nd) of said high refractive index layer is λ 0 /4;

the optical thickness (nd) of said low refractive index layer is λ 0 /4;

λ 0 is the design wavelength of the initial filter structure; and

x represents a thickness coefficient, said thickness coefficient being the thickness of the spacer layer (i) divided by the thickness of said high refractive index layer, or (ii) divided by the thickness of said low refractive index layer;

wherein each said lower mirror stack is directly deposited on and directly contacts said single substrate;

wherein spacer layers of two adjacent narrow band pass filters directly contact one another; wherein lower mirror stacks of two adjacent narrow band pass filters directly contact one another; and wherein upper stacks of two adjacent narrow band pass filters directly contact one another; and

wherein spacer layers of two adjacent narrow band pass filters have different thickness with respect to one another; wherein lower mirror stacks of two adjacent narrow band pass filters have the same thickness with respect to one another; and wherein upper stacks of two adjacent narrow band pass filters have the same thickness with respect to one another.

2. A filter array comprising a plurality of narrow bandpass filters integrated on a single substrate ( 1 ), each said narrow bandpass filter independently comprising a material having a structure of formula (HL) m xH(LH) m , wherein

(HL) m represents a lower mirror stack;

(LH) m represents an upper mirror stack;

xH represents a spacer layer;

H is a high refractive index layer;

L is a low refractive index layer;

m is the number of high and low refractive index layer pairs,

m≧2;

the optical thickness (nd) of said high refractive index layer is λ 0 /4;

the optical thickness (nd) of said low refractive index layer is λ 0 /4;

λ 0 is the design wavelength of the initial filter structure; and

x represents a thickness coefficient, said thickness coefficient being the thickness of the spacer layer (i) divided by the thickness of said high refractive index layer, or (ii) divided by the thickness of said low refractive index layer,

wherein each said lower mirror stack is directly deposited on and directly contacts said single substrate;

wherein spacer layers of two adjacent narrow band pass filters directly contact one another; wherein lower mirror stacks of two adjacent narrow band pass filters directly contact one another; and wherein upper stacks of two adjacent narrow band pass filters directly contact one another; and

wherein spacer layers of two adjacent narrow band pass filters have different thickness with respect to one another; wherein lower mirror stacks of two adjacent narrow band pass filters have the same thickness with respect to one another; and wherein upper stacks of two adjacent narrow band pass filters have the same thickness with respect to one another.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 26, 2007
From: WANG, SHAOWEI; LU, WEI; CHEN, XIAOSHUANG; LI, NING; LI, ZHIFENG; CHENG, PINGPING; ZHANG, BO
To: SHANGHAI INSTITUTE OF TECHNICAL PHYSICS, CHINESE ACADEMY OF SCIENCES
Reel/Frame 020019/0703 →
Priority Claims (1)
CN 2005 1 0025460 · Apr 27, 2005 · national
Continuity (2)
Continuation PCTCN2006000776 · Apr 24, 2006
Related Publication 20080042782A1 · Feb 21, 2008