Endpoint detection for photomask etching
Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.
1. A method for processing a substrate, comprising:
etching a photomask reticle disposed on a substrate support in a plasma etch chamber;
obtaining a first signal indicative of light collected through a first window of the substrate support, the first window disposed below a center of the photomask reticle;
obtaining a second signal indicative of light collected through a second window of the substrate support, the second window disposed below a first edge of the photomask reticle;
obtaining OES information collected through a sidewall of the etch chamber;
normalizing at least one of the signals using the OES information;
determining from the normalized signal and an optical thin film model at least one of an etch rate or thickness of a chromium layer disposed on the photomask reticle; and
determining a parameter of etching the photomask reticle using the OES information and at least one of the obtained signals.
2. The method of claim 1 further comprising:
determining from the normalized signal and an optical thin film model at least one of an etch rate or thickness of a resist layer disposed on the photomask reticle.
3. The method of claim 1 further comprising:
determining from the normalized signal and an optical thin film model an etch selectivity between a resist layer and a chromium layer disposed on the photomask reticle.
4. The method of claim 1 , wherein the parameter is at least one of etch rate or endpoint.
5. The method of claim 1 further comprising:
obtaining a third signal indicative of light collected through a third window of the substrate support, the third window disposed below a second edge of the photomask reticle.
6. The method of claim 1 further comprising:
adjusting etching of the photomask reticle in response to the OES information and the obtained signals.