Semiconductor integrated circuit device including charge pump circuit capable of suppressing noise
View Patent ↗In a semiconductor integrated circuit device including a charge pump circuit flowing an operating current therethrough, a current circuit is adapted to receive the operating current and a substantially constant current and generate an inverse current relative to the operating current and the substantially constant current.
1. A semiconductor integrated circuit device, comprising:
a charge pump circuit flowing an operating current therethrough;
a current circuit adapted to receive said operating current and a substantially constant current and generate an inverse current relative to said operating current and said substantially constant current;
a constant current source for generating said substantially constant current circuit; and
first and second power supply lines, said first power supply line being connected to said charge pump circuit and said constant current source,
said current circuit comprising:
a first current mirror circuit having a first input current terminal connected to said charge pump circuit and a first output current terminal connected to said constant current source; and
a second current mirror circuit having a second input current terminal connected to said constant current source and a second output current terminal, wherein,
said first current mirror circuit comprising:
a first transistor connected between said charge pump circuit and said second power supply line; and
a second transistor connected between said constant current source and said second power supply line, said first and second transistors having a first common control terminal,
said second current mirror circuit comprising:
a third transistor connected between said constant current source and said second power supply line; and
a fourth transistor connected between said first and second power supply lines, said third and fourth transistors having a second common control terminal,
wherein the semiconductor integrated circuit device further comprises a voltage clamp circuit connected between said first and second power supply lines and connected to said charge pump circuit and said first transistor.
2. The semiconductor integrated circuit device as set forth in claim 1 , said voltage clamp circuit comprises:
a fifth transistor connected between said charge pump circuit and said first transistor;
a Zener diode connected between said first power supply line and a control terminal of said fifth transistor; and
a resistance element connected between the control terminal of said fifth transistor and said second power supply line.
3. The semiconductor integrated circuit device as set forth in claim 1 , wherein said charge pump circuit comprises:
a rectangular oscillating circuit adapted to generate a clock signal; and
a step-up circuit clocked by said clock signal.
4. A semiconductor integrated circuit device, comprising:
a charge pump circuit flowing an operating current therethrough; and
a current circuit adapted to receive said operating current and a substantially constant current and generate an inverse current relative to said operating current and said substantially constant current,
wherein said charge pump circuit comprises:
a rectangular oscillating circuit adapted to generate a clock signal; and
a step-up circuit clocked by said clock signal.
5. The semiconductor integrated circuit device as set forth in claim 4 , further comprising a constant current source for generating said substantially constant current circuit,
said current circuit comprising:
a first current mirror circuit having a first input current terminal connected to said charge pump circuit and a first output current terminal connected to said constant current source; and
a second current mirror circuit having a second input current terminal connected to said constant current source and a second output current terminal.
6. The semiconductor integrated circuit device as set forth in claim 5 , further comprising first and second power supply lines, said first power supply line being connected to said charge pump circuit and said constant current source,
said first current mirror circuit comprising:
a first transistor connected between said charge pump circuit and said second power supply line; and
a second transistor connected between said constant current source and said second power supply line, said first and second transistors having a first common control terminal,
said second current mirror circuit comprising:
a third transistor connected between said constant current source and said second power supply line; and
a fourth transistor connected between said first and second power supply lines, said third and fourth transistors having a second common control terminal.
7. A semiconductor integrated circuit device, comprising:
a charge pump circuit flowing an operating current therethrough;
a current circuit adapted to receive said operating current and a substantially constant current and generate an inverse current relative to said operating current and said substantially constant current;
a constant current source for generating said substantially constant current circuit;
first and second power supply lines, said first power supply line being connected to said charge pump circuit and said constant current source; and
a voltage clamp circuit connected between said first and second power supply lines and connected to said charge pump circuit and a first transistor of the current circuit, the first transistor connected between said charge pump circuit and said second power supply line.
8. The semiconductor integrated circuit device as set forth in claim 7 , wherein said current circuit comprises:
a first current mirror circuit including said first transistor and having a first input current terminal connected to said charge pump circuit and a first output current terminal connected to said constant current source; and
a second current mirror circuit having a second input current terminal connected to said constant current source and a second output current terminal.
9. The semiconductor integrated circuit device as set forth in claim 8 , wherein said first current mirror circuit comprises:
said first transistor; and
a second transistor connected between said constant current source and said second power supply line, said first and second transistors having a first common control terminal,
said second current mirror circuit comprising:
a third transistor connected between said constant current source and said second power supply line; and
a fourth transistor connected between said first and second power supply lines, said third and fourth transistors having a second common control terminal.
10. The semiconductor integrated circuit device as set forth in claim 7 , wherein said charge pump circuit comprises:
a rectangular oscillating circuit adapted to generate a clock signal; and
a step-up circuit clocked by said clock signal.