IP Library Granted Patent US 7,861,668
Granted Patent B2
US 7,861,668 · App. 11/931,585 · Granted Jan 4, 2011

Batch-type remote plasma processing apparatus

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Quick Facts
Patent No.
US 7,861,668
App. No.
11/931,585
Granted
Jan 4, 2011
Kind
B2
Abstract

A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Claims (15)

1. A processing tube, comprising:

a processing chamber in which a plurality of substrates are to be stacked and accommodated; and

an electrical discharging chamber partitioned from the processing chamber, processing gas being to be supplied into the electrical discharging chamber, and a pair of electrodes to generate plasma at least in the electrical discharging chamber being accommodated in the electrical discharging chamber,

wherein the electrical discharging chamber extends in a circumferential direction of the process tube such that the electrical discharging chamber does not form a cylinder and the electrical discharging chamber is formed at a portion of an inner wall of the processing chamber,

wherein the inner wall of the processing chamber contacts the plasma ejected from the electrical discharging chamber.

2. The process tube as recited in claim 1 , wherein the electrical discharging chamber is partitioned from the processing chamber by a partition, and

a blowout opening to supply the processing gas into the processing chamber is provided at the partition.

3. The process tube as recited in claim 1 , wherein the electrical discharging chamber is formed at one side of the plurality of the substrates to be stacked in the processing chamber.

4. A processing tube, comprising:

a processing chamber in which a plurality of substrates are to be stacked and accommodated;

two protect pipes; and

an electrical discharging chamber partitioned from the processing chamber such that the electrical discharging chamber surrounds the protect pipes, processing gas being to be supplied into the electrical discharging chamber, and a pair of electrodes to generate plasma at least in the electrical discharging chamber being respectively accommodated in the protect pipes,

wherein the electrical discharging chamber extends in a circumferential direction of the process tube such that the electrical discharging chamber does not form a cylinder and the electrical discharging chamber is formed at a portion of an inner wall of the processing chamber,

wherein the inner wall of the processing chamber contacts the plasma ejected from the electrical discharging chamber.

5. The process tube as recited in claim 4 , wherein the protect pipes pass through a side surface of the processing tube.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2018
From: HITACHI KOKUSAI ELECTRIC INC.
To: KOKUSAI ELECTRIC CORPORATION
Reel/Frame 048008/0206 →