FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

1 . An n-channel field effect transistor, comprising:

a first electrode film provided over a semiconductor substrate; and

a second electrode film provided on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,

wherein at least one of said first electrode film and said second electrode film is a stressor film that is capable of exhibiting a compressive stress over said semiconductor substrate, and

wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide.

2 . A p-channel field effect transistor, comprising:

a first electrode film provided over semiconductor substrate; and

a second electrode film provided on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,

wherein at least one of said first electrode film or said second electrode film is a stressor film that is capable of exhibiting a tensile stress for said semiconductor substrate, and

wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide.

3 . The field effect transistor as set forth in claim 1 ,

wherein said second electrode film is said stressor film that is capable of exhibiting a compressive stress over said semiconductor substrate.

4 . The field effect transistor as set forth in claim 2 ,

wherein said second electrode film is said stressor film that is capable of exhibiting a tensile stress for said semiconductor substrate.

5 . The field effect transistor as set forth in claim 1 ,

wherein said second electrode film is selected from a group consisting of tungsten, molybdenum, titanium, tantalum, and ruthenium, and a nitride thereof.

6 . The field effect transistor as set forth in claim 2 ,

wherein said second electrode film is selected from a group consisting of tungsten, molybdenum, titanium, tantalum, and ruthenium, and a nitride thereof.

7 . The field effect transistor as set forth in claim 3 ,

wherein said second electrode film is selected from a group consisting of tungsten, molybdenum, titanium, tantalum, and ruthenium, and a nitride thereof.

8 . The field effect transistor as set forth in claim 4 ,

wherein said second electrode film is selected from a group consisting of tungsten, molybdenum, titanium, tantalum, and ruthenium, and a nitride thereof.

9 . A semiconductor device comprising the field effect transistor of claim 1 ,

wherein said semiconductor device comprises a plurality of said field effect transistors.

10 . A semiconductor device comprising the field effect transistor of claim 2 ,

wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.

11 . A semiconductor device comprising the field effect transistor of claim 3 ,

wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.

12 . A semiconductor device comprising the field effect transistor of claim 4 ,

wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.

13 . A semiconductor device comprising the field effect transistor of claim 5 ,

wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.

14 . A semiconductor device comprising the field effect transistor of claim 6 ,

wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.

15 . A semiconductor device comprising the field effect transistor of claim 7 ,

wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.

16 . A semiconductor device comprising the field effect transistor of claim 8 ,

wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.

17 . A method for manufacturing an n-channel field effect transistor, comprising:

forming a first electrode film on a semiconductor substrate; and

forming a second electrode film on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,

wherein at least one of said first electrode film or said second electrode film is a stressor film that is capable of exhibiting a compressive stress over said semiconductor substrate, and

wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide.

18 . The method for manufacturing the field effect transistor as set forth in claim 17 ,

wherein said stressor film is formed by a sputter process at a temperature higher than a room temperature.

19 . A method for manufacturing a p-channel field effect transistor, comprising:

forming a first electrode film on a semiconductor substrate; and

forming a second electrode film on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,

wherein at least one of said first electrode film or said second electrode film is a stressor film that is capable of exhibiting a tensile stress for said semiconductor substrate, and

wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide.

20 . The method for manufacturing the field effect transistor as set forth in claim 19 ,

wherein said stressor film is formed by a chemical vapor deposition process at a temperature higher than a room temperature.

21 . A method for manufacturing a semiconductor device, comprising:

manufacturing said n-channel field effect transistor by the method; forming a first electrode film on a semiconductor substrate; and forming a second electrode film on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,

wherein at least one of said first electrode film or said second electrode film is a stressor film that is capable of exhibiting a compressive stress over said semiconductor substrate, and

wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide

or the method for manufacturing the n-channel field effect transistor, wherein said stressor film is formed by a sputter process at a temperature higher than a room temperature; and

manufacturing said p-channel field effect transistor by the method; forming a first electrode film on a semiconductor substrate; and

forming a second electrode film on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,

wherein at least one of said first electrode film or said second electrode film is a stressor film that is capable of exhibiting a tensile stress for said semiconductor substrate, and

wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide

or method for manufacturing the p-channel field effect transistor wherein said stressor film is formed by a chemical vapor deposition process at a temperature higher than a room temperature,

wherein said n-channel field effect transistor and said p-channel field effect transistor are formed in said semiconductor substrate.