Divided bitline flash memory array with local sense and signal transmission

1. A flash memory array comprising:

a plurality of memory segments, each memory segment of the plurality of memory segments comprising a plurality of memory cell blocks, the plurality of memory cell blocks comprising a plurality of bitlines;

a data cache configured to store read data of selected bitlines of a selected memory segment, wherein the selected memory segment is a memory segment from the plurality of memory segments selected for a read operation; and

a plurality of segment data handlers, one segment data handler of the plurality of segment data handlers coupled between the data cache and a memory segment and each of segment data handlers other than the segment data handler coupled between the data cache and the memory segment is coupled between a pair of adjacent memory segments of the plurality of memory segments, each segment data handler configured to

condition the plurality of bitlines of a memory segment coupled to the each segment data handler, wherein conditioning the plurality of bitlines of the memory segment comprises at least one of pre-charging at least one bitline to a pre-charge voltage and shielding at least one bitline to a reference potential,

sense read data from at least one bitline of the plurality of bitlines of the memory segment coupled to the each segment data handler, and

transmit the sensed read data to the data cache;

wherein the each segment data handler transmits the sensed read data to the data cache through at least one segment data handler laid between the memory segment of the pair of adjacent memory segments and the data cache, when the each segment data handler is coupled between the pair of adjacent memory segments; and

wherein the each segment data handler transmits the sensed read data to the data cache directly when the each segment data handler is coupled between the data cache and a memory segment.

2. The flash memory array of claim 1 , wherein the data cache is configured at an edge of the flash memory array.

3. The flash memory array of claim 1 , wherein the reference potential is a ground potential.

4. A method for performing a read operation in a flash memory array, the flash memory array partitioned into a plurality of memory segments, each memory segment comprising a plurality of memory cell blocks, the plurality of memory cell blocks comprising a plurality of bitlines, the method comprising:

selecting a memory segment of the plurality of memory segments and bitlines of the memory segment for a read operation;

pre-charging the selected bitlines of the selected memory segment to a pre-charge voltage;

sensing read data from the selected bitlines of selected memory segment by a segment data handler, wherein the segment data handler is communicably coupled to the selected memory segment; and

transmitting the read data to a data cache of the flash memory array, wherein transmitting the read data comprising

transmitting the read data to the data cache through at least one segment data handler between the data cache and the selected memory segment, where the at least one segment data handler is between the data cache and the selected memory segment, and

transmitting the read data from the data handler to the data cache directly, when the segment data handler is directly connected to the data cache.

5. The method of claim 4 , wherein pre-charging the selected bitlines of the selected memory segment to the pre-charge voltage further comprising shielding non-selected bitlines of the selected memory segment to a reference potential.