Method of forming metal wiring in semiconductor device
View Patent ↗A method for forming a metal wiring of a semiconductor device capable of efficiently preventing a hillock phenomenon occurred in a subsequent annealing process of a metal wiring process. The method for forming a metal wiring of a semiconductor device includes forming an Al growth stop film on the upper interface of an Al wiring film by reacting implanted reactive ions with a Ti film or the Al in the Al wiring film.
1. A method comprising:
forming an interlayer insulating layer over a semiconductor substrate including a predetermined lower structure;
forming an Al wiring stacked structure over the interlayer insulating layer, wherein the Al wiring structure is composed of a plurality of films including an Al wiring film and a first Ti-based film formed over the Al wiring film;
forming an Al growth stop film at an interface between the Al wiring film and the first Ti-based film; and then
forming a plurality of Al wiring stacked structure patterns over the interlayer insulating layer,
wherein the plurality of Al wiring stacked structure patterns is formed using a dry etching process and the Al growth stop film is formed using an ion implantation method.
2. The method of claim 1 , wherein the ion implantation method includes implanting reactive ions at the interface between the Al wiring film and the second Ti-based film.
3. The method of claim 2 , wherein the reactive ions comprise nitride ions.
4. The method of claim 3 , wherein the Al growth stop film comprises TiN.
5. The method of claim 4 , wherein the Al growth stop film comprises Al 2 O 3 .
6. The method of claim 2 , wherein the reactive ions comprise oxygen ions.
7. A method comprising:
forming an interlayer insulating layer over a semiconductor substrate including a predetermined lower structure;
forming an Al wiring stacked structure over the interlayer insulating layer, wherein the Al wiring structure is composed of a plurality of films including an Al wiring film, a first Ti-based film formed over the Al wiring film, second and third Ti-based films formed between the Al wiring film and the interlayer insulating layer, and a fourth Ti-based film formed over the first Ti-based film;
forming an Al growth stop film at an interface between the Al wiring film and the first Ti-based film; and then
forming a plurality of Al wiring stacked structure patterns over the interlayer insulating layer,
wherein the first and third Ti-based films comprise Ti films and the second and fourth Ti-based comprises TiN films.