Apparatus for fabrication of GaN bulk single crystal and fabrication method of GaN single crystal ingot using the same
An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space between the ceiling and the floor, wherein the ceiling is opposite to the floor; a quartz vessel on the floor containing Ga metal; a mount installed on the ceiling on which a GaN substrate is mounted, the GaN substrate being opposite to the quartz vessel; a first gas supplying unit supplying the quartz vessel with hydrogen chloride (HCl) gas; a second gas supplying unit supplying the internal space of the reactor with ammonia (NH 3 ) gas; and a heating unit installed in conjunction with the wall of the reactor for heating the internal space, wherein the lower portion of the internal space is heated to a higher temperature than the upper portion.
1. An apparatus for fabricating a GaN (gallium nitride) single crystal, the apparatus comprising:
a reactor including a ceiling, a floor and a wall encompassing an internal space between the ceiling and the floor, wherein the ceiling is opposite to the floor;
a quartz vessel installed on the floor, in which a Ga metal is filled;
a mount installed on the ceiling in which a GaN substrate is mounted on, the GaN substrate being opposite to the quartz vessel;
a first gas supplying unit supplying the quartz vessel with hydrogen chloride (HCl) gas;
a second gas supplying unit supplying the internal space of the reactor with ammonia (NH3) gas; and
a heating unit in conjunction with the wall of the reactor for heating the internal space, wherein a lower portion of the internal space is heated to a higher temperature than the upper portion.
2. The apparatus of claim 1 , wherein the heating unit includes a first heater heating the upper portion of the internal space and a second heater heating the lower portion thereof.
3. The apparatus of clam 2 , wherein a heating temperature of the first heater ranges from 300° C. to 900° C. and a heating temperature of the second heater ranges from 500° C. to 1,200° C.
4. The apparatus of claim 1 , wherein the mount includes heatsink material.
5. The apparatus of claim 1 , wherein the reactor further includes a gas exhaust.
6. The apparatus of claim 1 , wherein the first gas supplying unit supplies carrier gas as well as HCl gas.
7. The apparatus of claim 1 , the second gas supplying unit supplies carrier gas as well as NH 3 gas.