Method for manufacturing semiconductor device
View Patent ↗According to the present invention, there is provided a method for manufacturing a semiconductor device that includes preparing a first semiconductor substrate and a second semiconductor substrate, forming a first insulating film on a surface of the first semiconductor substrate, forming circuit elements on a first surface of the second semiconductor substrate, grinding a second surface of the second semiconductor substrate, forming a second insulating film on the second surface of the second semiconductor substrate, and bonding the first insulating film and the second insulating film.
1. A method for manufacturing a semiconductor device, comprising:
preparing a first semiconductor substrate and a second semiconductor substrate;
forming a first insulating film on a surface of the first semiconductor substrate;
forming circuit elements on a first surface of the second semiconductor substrate;
grinding a second surface of the second semiconductor substrate;
forming a second insulating film on the second surface of the second semiconductor substrate; and
bonding the first insulating film and the second insulating film.
2. The method for manufacturing the semiconductor device according to claim 1 , wherein a heat treatment is performed after the first insulating film and the second insulating film are bonded together.
3. The method for manufacturing the semiconductor device according to claim 2 , wherein the heat treatment is performed under a condition that characteristics of the circuit element on the first surface of the second semiconductor substrate are not deteriorated.