Fabrication process of a semiconductor device
View Patent ↗A method for fabricating a semiconductor device has forming an opening defined by an inner wall surface in an insulation film, covering said inner wall surface with a Cu—Mn alloy layer, depositing a first Cu layer over said Cu—Mn alloy layer without exposing said Cu—Mn alloy layer to the air, depositing a second Cu layer over said first Cu layer and filling said opening with said second Cu layer, and forming a barrier layer over said inner wall surface as a result of a reaction between Mn in said Cu—Mn alloy layer and said insulation film.
1. A method for fabricating a semiconductor device, comprising:
forming an opening defined by an inner wall surface in an insulation film;
covering said inner wall surface with a Cu—Mn alloy layer;
depositing a first Cu layer over said Cu—Mn alloy layer without exposing said Cu—Mn alloy layer to the air;
depositing a second Cu layer over said first Cu layer and filling said opening with said second Cu layer; and
forming a barrier layer over said inner wall surface as a result of a reaction between Mn in said Cu—Mn alloy layer and said insulation film.
2. The method as claimed in claim 1 , further comprising, after forming said Cu—Mn alloy layer but before depositing said first Cu layer, re-sputtering a surface of said Cu—Mn alloy layer.
3. The method as claimed in claim 1 , wherein said vacuum environment has a pressure of 10 −7 Pa or less.
4. The method as claimed in claim 1 , wherein said Cu—Mn alloy layer is formed by a sputtering process, said first Cu layer is formed by a sputtering process, and said second Cu layer is formed by an electrolytic plating process.
5. The method as claimed in claim 1 , wherein said first Cu layer is formed with a thickness of 3-10 nm.
6. A method for fabricating a semiconductor device, comprising:
forming an opening defined by an inner wall surface in an insulation film;
covering said inner wall surface with a Cu—Mn alloy layer;
terminating a surface of said Cu—Mn alloy layer with hydrogen;
depositing a Cu layer over said Cu—Mn alloy layer and filling g said opening with said Cu layer; and
forming a barrier layer over said inner wall surface as a result of a reaction between Mn in said Cu—Mn alloy layer and said insulation film.
7. The method as claimed in claim 6 , wherein hydrogen termination is conducted by carrying out a hydrogen plasma processing.
8. The method as claimed in claim 7 , wherein said hydrogen plasma processing is conducted at a temperature of 100-150° C.
9. A method for fabricating a semiconductor device, comprising:
forming an opening defined by an inner wall surface in an insulation film;
covering said inner wall surface with a Cu—Mn alloy layer;
depositing a Cu layer over said Cu—Mn alloy layer; and
forming a barrier layer over said inner wall surface as a result of a reaction between Mn in said Cu—Mn alloy layer and said insulation film,
wherein said method further comprises, after forming said Cu—Mn alloy layer before depositing said Cu layer, exposing a surface of said Cu—Mn alloy layer to a gas that forms a gaseous reaction product when reacted with a Mn oxide, or re-sputtering a surface of said Cu—Mn alloy layer.
10. The method as claimed in claim 9 , wherein exposing to said gas that forms said gaseous reaction product upon said Mn oxide is conducted at a temperature of 100-400° C.
11. The method as claimed in claim 9 , wherein forming said barrier layer is conducted while exposing to an ambient that forms a gaseous reaction product upon reaction with Mn.
12. The method as claimed in claim 10 , wherein said gas forming said gaseous reaction product upon reaction with Mn or Mn oxide is a gas containing at least one of formic acid, carboxylic acid, hexafluoroacetylacetonate, H 2 O and CO 2 .