IP Library Granted Patent US 7,808,018
Granted Patent B2
US 7,808,018 · App. 11/941,096 · Granted Oct 5, 2010

Solid-state imaging apparatus

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,808,018
App. No.
11/941,096
Granted
Oct 5, 2010
Kind
B2
Abstract

A solid-state imaging apparatus includes a pixel array comprising a plurality of light receiving elements disposed in a charge transfer direction, the plurality of light receiving elements converting a light signal into an electric signal, a first charge transfer unit and a second charge transfer unit arranged on each side of the pixel array and transferring a signal charge input from the pixel array in the charge transfer direction, a first floating diffusion region connected to the first charge transfer unit, a second floating diffusion region connected to the second charge transfer unit, a wiring layer connecting the first floating diffusion region with the second floating diffusion region, and an output circuit connected to the wiring layer and output a signal voltage in accordance with a potential of the first floating diffusion region and the second floating diffusion region.

Claims (34)

1. A solid-state imaging apparatus comprising:

a pixel array comprising a plurality of light receiving elements disposed in a charge transfer direction, the plurality of light receiving elements converting a light signal into an electric signal;

a first charge transfer unit and a second charge transfer unit respectively arranged on a first side and a second side of the pixel array and transferring a signal charge input from the pixel array in the charge transfer direction;

a first floating diffusion region connected to the first charge transfer unit;

a second floating diffusion region connected to the second charge transfer unit;

a wiring layer connecting the first floating diffusion region with the second floating diffusion region; and

an output circuit connected to the wiring layer and output a signal voltage in accordance with a potential of the first floating diffusion region and the second floating diffusion region.

2. The solid-state imaging apparatus according to claim 1 , further comprising:

a reset drain; and

a reset gate provided between the first floating diffusion region and the reset drain.

3. The solid-state imaging apparatus according to claim 2 , wherein the reset drain and the reset gate are a first reset drain and a first reset gate, respectively, and the solid-state imaging apparatus further comprises a second reset drain and a second reset gate provided between the second floating diffusion region and the second reset drain.

4. A solid-state imaging apparatus comprising:

a plurality of pixels arranged in a charge transfer direction;

first and second charge transfer units arranged on first and second sides of the plurality of pixels, respectively, and transferring a signal charge input from the plurality of pixels in the charge transfer direction;

first and second floating diffusion regions connected to the first and second charge transfer units, respectively;

a wiring layer connecting the first and second floating diffusion regions; and

a single output circuit connected to the wiring layer and output a signal voltage in accordance with a potential of the first floating diffusion region and the second floating diffusion region.

5. The solid-state imaging apparatus according to claim 4 , further comprising:

a reset drain; and

a reset gate provided between the first floating diffusion region and the reset drain.

6. The solid-state imaging apparatus according to claim 5 , wherein the reset drain and the reset gate are a first reset drain and a first reset gate, respectively, and the solid-state imaging apparatus further comprises a second reset drain and a second reset gate provided between the second floating diffusion region and the second reset drain.

7. A solid-state imaging apparatus comprising:

a first floating diffusion region;

a first charge transfer unit;

a first output gate provided between the first floating diffusion region and the first charge transfer unit;

a second floating diffusion region;

a second charge transfer unit;

a second output gate provided between the second floating diffusion region and the second charge transfer unit; and

a wiring layer connecting the first floating diffusion region and the second floating diffusion region to each other.

8. The solid-state imaging apparatus according to claim 7 , further comprises an output circuit connected to the wiring layer.

9. The solid-state imaging apparatus according to claim 8 , further comprising:

a reset drain; and

a reset gate provided between the first floating diffusion region and the reset drain.

10. The solid-state imaging apparatus according to claim 9 , wherein the reset drain and the reset gate are a first reset drain and a first reset gate, respectively, and the solid-state imaging apparatus further comprises a second reset drain and a second reset gate provided between the second floating diffusion region and the second reset drain.

Assignments (2)
CHANGE OF NAME Recorded Nov 2, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025235/0321 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 16, 2007
From: UEMURA, AKIRA
To: NEC ELECTRONICS CORPORATION
Reel/Frame 020124/0594 →