Granted Patent B2

US 7,906,274 · App. 11/943,907 · Granted Mar 15, 2011

Abstract

Claims (42)

1. A method of forming a lithographic template, said method comprising:

creating a multi-layered structure, by (i) forming, on a body, a conducting layer, and (ii) forming on said conducting layer, a patterned layer having protrusions and recessions, said recessions exposing portions of said conducting layer;

depositing a hard mask material on said multi-layered structure, said deposited hard mask material covering a top surface of said patterned layer and said portions of said conducting layer;

removing said patterned layer, with said hard mask material remaining on said portions of said conducting layer;

positioning a resist pattern on said multi-layered structure to define a region of said multi-layered structure; and

selectively removing portions of said multi-layered structure in superimposition with said region using said hard mask material as an etching mask, wherein selectively removing said portions of said multi-layered structure using said hard mask material as an etching mask comprises removing portions of said conducting layer and said body in a single step.

2. The method as recited in claim 1 further comprising removing said hard mask material and said resist pattern.

3. The method as recited in claim 2 further comprising removing said conducting layer.

4. The method as recited in claim 2 further comprising defining a mesa in said body.

5. The method as recited in claim 2 further comprising positioning an adhesion layer on said multi-layered structure.

6. The method as recited in claim 5 further comprising positioning an imaging layer on said multi-layered structure, defining a mesa pattern, and selectively removing portions of said multi-layered structure using said imaging layer as an etching mask, and removing said imagining layer, said adhesion layer, and said conducting layer.

7. The method as recited in claim 1 wherein said conducting layer comprises a material selected from a set of materials consisting of tantalum, tungsten, molybdenum, titanium, tantalum nitride, tungsten nitride, titanium nitride, molybdenum nitride, tantalum silicide, tungsten silicide, titanium silicide, molybdenum silicide, tantalum silicon nitride, tungsten silicon nitride, titanium silicon nitride, molybdenum silicon nitride, or other refractory metal alloys.

8. The method as recited in claim 1 wherein said conducting layer has a thickness of less than 10 nanometers.

9. The method as recited in claim 1 wherein said hard mask material comprises a material selected from a set of materials consisting of chromium, nickel, platinum, and alloys thereof.

10. The method as recited in claim 3 wherein removing said conducting layer further includes gas-phase etching said conducting layer with a gas selected from a set of gases including xenon difluoride, xenon tetrafluoride, xenon hexafluoride, krypton difluoride, krypton tetrafluoride, krypton hexafluoride, polyatomic halogen fluoride, and a noble gas halide.

11. The method as recited in claim 1 wherein removing said portions of said conducting layer further includes monitoring a reflectance of a light impinged thereon.

12. A method of forming a lithographic template, said method comprising:

creating a multi-layered structure by (i) forming, on a body, a conducting layer, and (ii) forming on said conducting layer, a patterned layer having protrusions and recessions, said recessions exposing portions of said conducting layer;

depositing a hard mask material anisotropically on said multi-layered structure, covering a top surface of said patterned layer and said portions of said conducting layer;

removing said patterned layer by a lift-off process, with said hard mask material remaining on said portions of said conducting layer; and

selectively removing portions of said multi-layered structure using said hard mask material as an etching mask, wherein selectively removing said portions of said multi-layered structure using said hard mask material as an etching mask comp rises removing portions of said conducting layer and said body in a single step.

13. The method as recited in claim 12 further comprising removing said hard mask material.

14. The method as recited in claim 13 further comprising removing said conducting layer.

15. The method as recited in claim 13 further comprising defining a mesa in said body.

16. The method as recited in claim 13 further comprising positioning an adhesion layer on said multi-layered structure.

17. The method as recited in claim 16 further comprising positioning an imaging layer on said multi-layered structure, defining a mesa pattern, and selectively removing portions of said multi-layered structure using said imaging layer as an etching mask, and removing said imagining layer, said adhesion layer, and said conducting layer.

18. The method as recited in claim 12 wherein said conducting layer comprises a material selected from a set of materials consisting of tantalum, tungsten, molybdenum, titanium, tantalum nitride, tungsten nitride, titanium nitride, molybdenum nitride, tantalum silicide, tungsten silicide, titanium silicide, molybdenum silicide, tantalum silicon nitride, tungsten silicon nitride, titanium silicon nitride, molybdenum silicon nitride, or other refractory metal alloys.

19. The method as recited in claim 12 wherein said conducting layer has a thickness of less than 10 nanometers.

20. The method as recited in claim 12 wherein said hard mask material comprises a material selected from a set of materials consisting of chromium, nickel, and platinum.

21. A method of forming a lithographic template, said method comprising:

creating a multi-layered structure, by forming, on a body, a conducting layer, and forming on said conducting layer, a patterned layer having protrusions and recessions, said recessions exposing portions of said conducting layer;

depositing a hard mask material anisotropically on said multi-layered structure covering a top surface of said patterned layer and said portions of said conducting layer;

removing said patterned layer by a lift-off process;

positioning a resist pattern on said multi-layered structure to define a region of said multi-layered structure;

selectively removing portions of said multi-layered structure in superimposition with said region using said hard mask material as an etching mask;

removing said hard mask material and said resist pattern;

positioning an adhesion layer on said multi-layered structure; and

positioning an imaging layer on said multi-layered structure, defining a mesa pattern, and selectively removing portions of said multi-layered structure using said imagining layer as an etching mask, and removing said imaging layer, said adhesion layer, and said conducting layer.

22. The method as recited in claim 21 wherein said conducting layer comprises a material selected from a set of materials consisting of tantalum, tungsten, molybdenum, titanium, tantalum nitride, tungsten nitride, titanium nitride, molybdenum nitride, tantalum silicide, tungsten silicide, titanium silicide, molybdenum silicide, tantalum silicon nitride, tungsten silicon nitride, titanium silicon nitride, molybdenum silicon nitride, or other refractory metal alloys.

23. The method as recited in claim 21 wherein said conducting layer has a thickness of less than 10 nanometers.

24. The method as recited in claim 22 wherein said hard mask material comprises a material selected from a set of materials consisting of chromium, nickel, platinum, and alloys thereof.

25. The method as recited in claim 21 , wherein removing the portions of said multi-layered structure using said hard mask material as an etching mask comprises selectively removing portions of said conducting layer and said body in a single step.

Assignments (10)