Semiconductor device and method of manufacturing the same
View Patent ↗In one embodiment of the present invention, provided is a semiconductor device having a silicon substrate provided with a DRAM region containing first transistors and capacitor elements, and with a logic region containing second transistors. A minimum gate length of the second transistors provided in the logic region is smaller than a minimum gate length of the first transistors provided in the DRAM region. One of a cobalt silicide layer and a titanium silicide layer is provided on source/drain regions and on gate electrodes of the first transistors provided in the DRAM region, and a nickel-containing silicide layer is provided on source/drain regions and on gate electrodes of the second transistors provided in the logic region.
1. A method of manufacturing a semiconductor device containing a first region provided with capacitor elements and first transistors, and a second region provided with second transistors, comprising:
forming first gate electrodes of said first transistors on a silicon substrate in said first region, and forming second gate electrodes of said second transistors on said silicon substrate in said second region, said second gate electrode having a minimum gate length smaller than a minimum gate length of said first gate electrodes;
forming first source/drain regions in said silicon substrate beside said first gate electrodes, and forming second source/drain regions in said silicon substrate beside said second gate electrodes;
forming, after said forming the first gate electrodes and the second gate electrodes, a first insulating film on said silicon substrate as being extended from said first region to said second region;
forming, after selectively removing said first insulating film in said first region, one of a cobalt film and a titanium film on an element-forming surface of said silicon substrate, and annealing the element-forming surface and the one of a cobalt film and a titanium film at a first temperature, to thereby form a first silicide layer on said first source/drain regions and on said first gate electrodes;
forming, after said forming the first silicide layer, a second insulating film over said silicon substrate, as being extended from said first region to said second region; and
selectively removing said first and second insulating films in said second region, forming a nickel-containing film on said element-forming surface, and annealing the nickel-containing film and said element-forming surface at a second temperature, to thereby form a second silicide layer on said second source/drain regions and on said second gate electrodes.
2. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said second temperature is lower than said first temperature.
3. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said first insulating film is a film causative of tensile stress.
4. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said first insulating film is a silicon oxide film, and said second insulating film is a silicon nitride film.
5. The method of manufacturing a semiconductor device as claimed in claim 4 , further comprising:
succeeding to said forming said second silicide layer, forming a third insulating film as being extended from the first region to the second region, said third insulating film being a silicon nitride film.