IP Library Granted Patent US 7,875,902
Granted Patent B2
US 7,875,902 · App. 11/947,433 · Granted Jan 25, 2011

Electro-static discharge protection device

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Quick Facts
Patent No.
US 7,875,902
App. No.
11/947,433
Granted
Jan 25, 2011
Kind
B2
Abstract

An electro-static discharge protection device includes a first conductive type well and a second conductive type well which are formed in a surface of the first conductive type layer or a first conductive type substrate. A first high concentration second conductive type region, a first high concentration first conductive type region, and a second high concentration second conductive type region are formed in a surface of the second conductive type well. A third high concentration second conductive type region is formed in a surface of the first conductive type well. The first high concentration second conductive type region and the first high concentration first conductive type region are connected with a first power supply of a potential. The third high concentration second conductive type region is connected with a second power supply having a potential different from the potential of the first power supply. The second high concentration second conductive type region is set to a potential different from the first power supply.

Claims (12)

1. An electro-static discharge protection circuit, comprising:

a first bipolar transistor and a second bipolar transistor, said first and second bipolar transistors cooperating with one another to perform silicon controlled rectification; and

a trigger device disposed apart from said first and second bipolar transistors;

wherein one end of said trigger device is connected directly to a base region of said first bipolar transistor, and

another end of said trigger device is connected directly to a base region of said second bipolar transistor.

2. The electro-static discharge protection circuit according to claim 1 , further comprising a first resistance element,

wherein said one end of said trigger device is connected to said base region of said first bipolar transistor via said first resistance element.

3. The electro-static discharge protection circuit according to claim 2 , further comprising a second resistance element,

wherein said another end of said trigger device is connected to a ground via said second resistance element.

4. The electro-static discharge protection circuit according to claim 1 , wherein:

an anode of said silicon controlled rectifier is connected to a pad, and

a cathode of said silicon controlled rectifier is connected to a ground.

Assignments (2)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
CHANGE OF NAME Recorded Nov 2, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025235/0321 →