Phosphorus-Stabilized Transition Metal Oxide Diffusion Barrier
Method for controlling glass formation on a semiconductor substrate. By using a doped diffusion barrier material, such as a transition metal oxide paste, the subsequent diffusion of glass forming elements into the substrate may be stabilized and controlled.
1 . A method for controlling glass formation on a semiconductor substrate, the method comprising the steps of:
doping a diffusion barrier material with a dopant;
depositing the diffusion barrier material on one or more areas of a surface of the semiconductor substrate, thereby forming a diffusion barrier;
subsequently depositing a diffusion comprising an element on the surface; and
forming a glass on the surface with the element.
2 . The method of claim 1 wherein the dopant comprises a group V element.
3 . The method of claim 2 wherein the dopant comprises phosphorous.
4 . The method of claim 1 wherein the diffusion barrier material comprises a paste.
5 . The method of claim 1 wherein the diffusion barrier material comprises a transition metal oxide.
6 . The method of claim 5 wherein the diffusion barrier material comprises TiO 2 .
7 . The method of claim 1 wherein the diffusion comprises POCl 3 .
8 . The method of claim 1 wherein the glass comprises a phosphorous glass.
9 . The method of claim 1 wherein the forming step comprises reacting the diffusion with oxygen.
10 . The method of claim 1 wherein the element is the same as the dopant.
11 . The method of claim 1 further comprising the step of controlling the diffusion of the element to the semiconductor surface.
12 . The method of claim 1 further comprising the step of reducing the thickness of the glass.
13 . A diffusion barrier on a semiconductor surface, the diffusion barrier formed from a transition metal oxide paste comprising a dopant.
14 . The diffusion barrier of claim 13 wherein said dopant comprises a group V element.
15 . The diffusion barrier of claim 14 wherein said dopant comprises phosphorous.
16 . The diffusion barrier of claim 11 wherein said transition metal oxide comprises TiO 2 .
17 . The diffusion barrier of claim 11 wherein said dopant controls subsequent glass formation on the surface.
18 . The diffusion barrier of claim 17 wherein said dopant reduces the subsequent glass formation on the surface.
19 . The diffusion barrier of claim 11 wherein said dopant increases the uniformity of subsequent glass formation on the surface.