Method and apparatus for performing limited area spectral analysis
A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.
1. A method of monitoring a substrate in a semiconductor substrate processing chamber, comprising:
acquiring data at a first location on a substrate disposed in a semiconductor substrate processing chamber using an in-situ measuring tool, the measuring tool moveable along two axes;
moving the measuring tool to at least a second location over the substrate;
acquiring data at least a second location on the substrate; and
analyzing the acquired data to identify defects in the monitored substrate.
2. The method of claim 1 , wherein analyzing the acquired data further comprises:
performing multivariate analysis of the acquired data.
3. The method of claim 2 , wherein analyzing the acquired data further comprises:
comparing the multivariate analysis of the monitored substrate to a stored multivariate analysis of a known reference substrate to identify defects in the monitored substrate.
4. The method of claim 1 , further comprising:
controlling the process in response to the acquired data.
5. The method of claim 4 , wherein the controlling further comprises:
determining an endpoint of a process being performed on the substrate.
6. The method of claim 5 , further comprising:
monitoring a desired location with the measuring tool until a reflectance pattern observed by the measuring tool matches a known reflectance pattern.
7. The method of claim 5 , further comprising:
detecting a first reflectance signal at a target location on the substrate; and
monitoring a second location on the substrate that correlates to the target location to detect a second reflectance signal that is stronger than the first reflectance signal.
8. A method of monitoring a substrate in a semiconductor substrate processing chamber, comprising:
providing an etch chamber having an in-situ measuring tool, the measuring tool moveable along two axes;
acquiring data at a first location on a substrate disposed in the etch chamber using the measuring tool;
moving the measuring tool to at least a second location over the substrate;
acquiring data at least a second location on the substrate; and
analyzing the acquired data to identify defects in the monitored substrate.
9. The method of claim 8 , further comprising:
scanning the substrate for a target; and
recording the location of the target.
10. The method of claim 9 , wherein the target is a high-reflectance spot disposed in a desired location on an alignment substrate.
11. The method of claim 9 , wherein the target is a feature formed on a substrate.
12. The method of claim 8 , wherein the data acquisition step further comprises:
locating a target on the substrate; and
monitoring the substrate.
13. The method of claim 12 , wherein the substrate is monitored at the target location.
14. The method of claim 12 , wherein the substrate is monitored at a predetermined offset from the target location.
15. The method of claim 8 , wherein analyzing the acquired data further comprises:
performing multivariate analysis of the acquired data.
16. The method of claim 12 , further comprising:
controlling the process in response to the acquired data.
17. The method of claim 16 , wherein the controlling further comprises:
determining an endpoint of an etch process being performed on the substrate.
18. The method of claim 12 , further comprising:
monitoring the target location with the measuring tool until a reflectance pattern observed by the measuring tool matches a known reflectance pattern.
19. The method of claim 8 , further comprising:
detecting a first reflectance signal at a target location on the substrate; and
monitoring a second location on the substrate that correlates to the target location to detect a second reflectance signal that is stronger than the first reflectance signal.
20. A method of monitoring a substrate in a semiconductor substrate processing chamber, comprising:
acquiring data at a first location on a substrate disposed in a semiconductor substrate processing chamber using an in-situ measuring tool, the measuring tool moveable along two axes;
moving the measuring tool to at least a second location over the substrate;
acquiring data at the second location on the substrate;
detecting a first reflectance signal at a target location on the substrate; and
monitoring a second location on the substrate that correlates to the target location to detect a second reflectance signal that is stronger than the first reflectance signal.