Method of fabricating thin film transistor
A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.
1. A method for fabricating a source/drain of a thin film transistor (TFT), comprising:
providing a substrate comprising a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon;
forming a metal layer over the substrate to cover the ohmic contact layer; and
etching the metal layer and the ohmic contact layer simultaneously by using a wet etching process to form a source/drain and expose the channel layer, wherein an etchant used in said wet etching process comprises an aqueous solution of mixture of hydrogen peroxide, phosphoric acid and hydrofluoric acid.
2. The method as claimed in claim 1 , wherein a concentration of hydrogen peroxide in said etchant is in a range of 3˜30 wt. %.
3. The method as claimed in claim 1 , wherein a concentration of phosphoric acid in said etchant is in a range of 0.1˜10 wt. %.
4. The method as claimed in claim 1 , wherein a concentration of hydrofluoric acid in said etchant is in a range of 0.05˜5 wt. %.
5. The method as claimed in claim 1 , wherein the metal layer comprises copper, copper alloy, molybdenum and molybdenum alloy.
6. The method as claimed in claim 5 , wherein said copper alloy comprises magnesium (Mg), chromium (Cr), tungsten (W), molybdenum (Mo), manganese (Mn), zirconium (Zr), titanium (Ti), nitrogen (N), carbon (C) and their mixed alloys; and said molybdenum alloys comprise silver (Ag), tantalum (Ta), titanium (Ti), aluminium (Al), chromium (Cr), nickel (Ni), tungsten (W), gold (Au) and their mixed alloys.
7. The method as claimed in claim 5 , wherein the step forming said metal layer comprises a step of forming a single material layer and a multi-layer structure.
8. The method as claimed in claim 7 , wherein said multi-layer structures comprise a double-layer structure and a triple-layer structure.
9. The method as claimed in claim 8 , wherein said double-layer structure is selected from a group consisting of copper/molybdenum, copper/molybdenum alloy and copper/copper alloy.
10. The method as claimed in claim 8 , wherein said triple-layer structure is selected from a group consisting of molybdenum/copper/molybdenum, molybdenum alloy/copper/molybdenum alloy and copper alloy/copper/copper alloy.
11. A method for fabricating a thin film transistor (TFT), comprising:
providing a substrate;
forming a gate over the substrate;
forming a dielectric layer over the gate;
forming a channel layer over the dielectric layer;
forming an ohmic contact layer over the channel layer;
forming a metal layer over the substrate and covering the ohmic contact layer; and
etching the metal layer and the ohmic contact layer simultaneously using a wet etching process to form a source/drain and expose the channel layer, wherein an etchant used in said wet etching process comprises an aqueous solution of hydrogen peroxide, phosphoric acid and hydrofluoric acid.
12. The method for fabricating a thin film transistor (TFT) as claimed in claim 11 , wherein a concentration of hydrogen peroxide in said etchant is in a range of 3˜30 wt. %.
13. The method for fabricating a thin film transistor (TFT) as claimed in claim 11 , wherein a concentration of phosphoric acid in said etchant is in a range of 0.1˜10 wt. %.
14. The method for fabricating a thin film transistor (TFT) as claimed in claim 11 , wherein a concentration of hydrofluoric acid in said etchant is in a range of 0.05˜5 wt. %.
15. The method for fabricating a thin film transistor (TFT) as claimed in claim 11 , wherein the metal layer comprises copper, copper alloy, molybdenum and molybdenum alloy.
16. The method for fabricating a thin film transistor (TFT) as claimed in claim 15 , wherein said copper alloy comprises magnesium (Mg), chromium (Cr), tungsten (W), molybdenum (Mo), manganese (Mn), zirconium (Zr), titanium (Ti), nitrogen (N), carbon (C) and their mixed alloys; and said molybdenum alloys comprise silver (Ag), tantalum (Ta), titanium (Ti), aluminium (Al), chromium (Cr), nickel (Ni), tungsten (W), gold (Au) and their mixed alloys.
17. The method for fabricating a thin film transistor (TFT) as claimed in claim 15 , wherein the step of forming said metal layer comprises a step of forming a single material layer and a multi-layer structure.
18. The method for fabricating a thin film transistor (TFT) as claimed in claim 17 , wherein said multi-layer structure comprises a double-layer structure and a triple-layer structure.
19. The method for fabricating a thin film transistor (TFT) as claimed in claim 18 , wherein said double-layer structure is selected from a group consisting of copper/molybdenum, copper/molybdenum alloy and copper/copper alloy.
20. The method for fabricating a thin film transistor (TFT) as claimed in claim 18 , wherein said triple-layer structure is selected from a group consisting of molybdenum/copper/molybdenum, molybdenum alloy/copper/molybdenum alloy and copper alloy/copper/copper alloy.