Method of removing residue from a substrate after a DRIE process
View Patent ↗The present disclosure provides a method of cleaning a semiconductor substrate after a DRIE etch process, wherein residue from the DRIE process is removed without damaging the substrate. The process may include contacting the micro-fluid ejection head with an aqueous solution of TMAH, stripping a photoresist etch mask from the micro-fluid ejection head, and dissolving a passivating coating from the substrate. Then the substrate may be contacted with an acidic solution. The method may further include rinsing and drying the substrate.
1. A method of removing AlFx residue from a substrate after a deep reactive ion reactive etching process, comprising the sequential steps of:
contacting the substrate with an aqueous solution of tetramethyl ammonium hydroxide and a surfactant;
soaking the substrate with a mixture of acetone and KCl;
contacting the substrate with a hydrofluoroether composition;
heating the substrate to about 175° C. for about 70 minutes;
contacting the substrate with a mixture comprising glacial acetic acid, ammonium fluoride, and dimethylacetamide;
rinsing the substrate with water; and
drying the substrate;
wherein after performing the rinsing and drying steps, the substrate is substantially free of residue AIFx.
2. The method of claim 1 , wherein the surfactant ranges from about 0.001 to about 0.1 percent by weight of the total solution.
3. The method of claim 1 , wherein the residue comprises AlFx, and wherein x is 3.
4. The method of claim 1 , wherein the step of soaking the substrate with a mixture of acetone and KCl comprises contacting the substrate with an amount of acetone and an amount of KCl, wherein the amount of acetone is substantially greater than the amount of KCl.
5. The method of claim 1 , further comprises applying a spray of acetone and KCl mixture to the substrate, after the step of soaking the substrate with the mixture of acetone and KCl.