SIMULATION METHOD, SIMULATION SYSTEM, AND METHOD OF CORRECTING MASK PATTERN

1 . A simulation method acquiring, by simulation, information on a transfer pattern realizable on a wafer as a result of photolithographic transfer of a mask pattern of a predetermined mask, comprising:

accepting an entry of measured dimension of said transfer pattern;

calculating an electric field vector for every predetermined position in a plane coordinate defined on the surface of said wafer;

calculating a flare electric field vector ascribable to said mask pattern for said every predetermined position;

adding said flare electric field vector to said electric field vector, and obtaining sum of squares of their triaxial vector components, to thereby calculate a light intensity distribution;

assuming a threshold value of light intensity observed for the edges at paired two points specifying calculated dimension of said transfer pattern in the simulation as an unknown constant, and determining, by regressive calculation, said threshold value so as to minimize difference between said calculated dimension and said measured dimension under said light intensity.

2 . The simulation method as claimed in claim 1 ,

wherein said predetermined mask is a phase shift mask, and

in said calculating a flare electric field vector ascribable to said mask pattern, a convolution integral of a mask function having a value of +1 for the 0-phase opening region, a value of −1 for the π-phase opening region, and a value of 0 for the shadowing region of the mask pattern, and Gaussian function having a tentative length of diffusion, is calculated as a first primitive flare, and said first primitive flare is then multiplied respectively by ratio of polarization in each of two orthogonal directions on a plane in parallel with the wafer, to thereby define a first primitive flare vector having the calculated products as the in-plane bidirectional components;

a convolution integral of a mask function having a value of +1 both for the 0-phase opening region and the π-phase opening region of the mask pattern, and Gaussian function having a tentative length of diffusion, is calculated as a second primitive flare vector normal to the wafer; and

said flare electric field vector is defined as a three-dimensional vector based on a combination of said first primitive flare vector multiplied by a tentative horizontal ratio and said second primitive flare vector multiplied by a tentative vertical ratio.

3 . The simulation method as claimed in claim 1 ,

wherein said predetermined mask is a binary mask, and

in said calculating a flare electric field vector ascribable to said mask pattern, a convolution integral of a mask function having a value of 1 for the opening region, and a value of 0 for the shadowing region of the mask pattern, and Gaussian function having a tentative length of diffusion, is calculated as a first primitive flare, and said first primitive flare is then multiplied respectively by ratio of polarization in each of two orthogonal directions on a plane in parallel with the wafer, to thereby define a first primitive flare vector having the calculated products as the in-plane bidirectional components;

said first primitive flare per se is defined as a second primitive flare vector normal to the wafer;

said flare electric field vector is defined as a three-dimensional vector based on a combination of said first primitive flare vector multiplied by a tentative horizontal ratio and said second primitive flare vector multiplied by a tentative vertical ratio.

4 . A method of correcting a mask pattern correcting said mask pattern using a lithographic model obtainable by the simulation method described in claim 1 .

5 . A simulation system acquiring, by simulation, information on a transfer pattern realizable on a wafer as a result of photolithographic transfer of a mask pattern of a predetermined mask, comprising:

a unit of accepting an entry of measured dimension of said transfer pattern;

a unit of calculating an electric field vector for every predetermined position in a plane coordinate defined on the surface of said wafer;

a unit of calculating a flare electric field vector ascribable to said mask pattern for said every predetermined position;

a unit of adding said flare electric field vector to said electric field vector, and obtaining sum of squares of their triaxial vector components, to thereby calculate a light intensity distribution; and

a unit of assuming a threshold value of light intensity observed for the edges at paired two points specifying calculated dimension of said transfer pattern in the simulation as an unknown constant, and determining, by regressive calculation, said threshold value so as to minimize difference between said calculated dimension and said measured dimension under said light intensity.

6 . A photomask having a corrected mask pattern obtainable by the method of correcting a mask pattern described in claim 4 .

7 . A method of manufacturing a semiconductor device comprising:

forming a resist film on a substrate;

forming a pattern in said resist film by light exposure through said photomask described in claim 6 , and development; and

processing said substrate using said resist film having said pattern transferred thereto.