METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In a method of manufacturing a semiconductor device, a plurality of structures are formed on a substrate, and a coating film is formed over a whole surface of the substrate to cover the plurality of structures. A photoresist layer is formed to have an opening portion above a target structure of the plurality of structures, and the coating film on a side of the opening is etched to expose a part of the target structure by using the photoresist layer as a mask while maintaining the substrate in a state covered with the coating film. Also, a target portion as at least a portion of the target structure is etched while leaving the coating film, and the photoresist layer and the coating film are removed.
1 . A method of manufacturing a semiconductor device, comprising:
forming a plurality of structures on a substrate;
forming a coating film over a whole surface of the substrate to cover said plurality of structures;
forming a photoresist layer to have an opening portion above a target structure of said plurality of structures;
etching the coating film on a side of the opening to expose a part of the target structure by using the photoresist layer as a mask while maintaining the substrate in a state covered with the coating film;
etching a target portion as at least a portion of the target structure while leaving the coating film; and
removing the photoresist layer and the coating film.
2 . The method according to claim 1 , wherein the coating film is made mainly of carbon.
3 . The method according to claim 2 , wherein said etching the coating film is performed under a condition that an etching rate of the coating film made mainly of carbon is higher than that of the target portion, and
said etching the target structure is performed under a condition that the etching rate of the target portion is higher than that of the coating film made mainly of carbon.
4 . The method according to claim 2 , wherein the coating film made mainly of carbon is an organic anti-reflective film.
5 . The method according to any of claim 2 , wherein said removing comprises:
removing the photoresist layer and the coating film by ashing, SPM washing, ozonization, or combinations thereof.
6 . The method according to claim 2 , wherein the coating film made mainly of carbon is formed using spin coating.
7 . The method according to claim 2 , wherein the plurality of structures contains a plurality of gate electrodes formed of polysilicon, and
the target structure is a part of the plurality of gate electrodes.
8 . The method according to claim 2 , wherein the target structure includes a polysilicon electrode, and a protection nitride film formed to cover the polysilicon electrode, and
said etching a target portion comprises:
etching the protection nitride film as the target portion.
9 . The method according to claim 8 , wherein the target structure includes a polysilicon electrode, a protection nitride film formed to cover the polysilicon electrode, sidewalls formed to cover sides of the polysilicon electrode and the protection nitride film, and a stopper nitride film formed of silicon nitride to cover the protection nitride film and the sidewalls, and
said etching a target portion comprises:
etching a part of the stopper nitride film and the protection nitride film as the target portion.
10 . The method according to claim 9 , further comprising:
siliciding the polysilicon electrode.