IP Library Granted Patent US 8,131,492
Granted Patent B2
US 8,131,492 · App. 11/964,206 · Granted Mar 6, 2012

Method of evaluating a film

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Quick Facts
Patent No.
US 8,131,492
App. No.
11/964,206
Granted
Mar 6, 2012
Kind
B2
Abstract

A method of directly measuring hydrogen permeability of a film is provided. The method of evaluating a film includes acquiring, with respect to a specimen including a plurality of films stacked on each other, ion dose-dependence data of intensity of γ-beam generated by hydrogen resonant nuclear reaction, and fitting the data with a functional equation of the ion dose.

Claims (24)

1. A method of measuring hydrogen permeability of a film, comprising:

acquiring, with respect to a specimen including a plurality of films stacked on each other, a profile of hydrogen concentration in a stacking direction of said plurality of films by performing resonant nuclear reaction measurement with respect to hydrogen using a resonant nuclear reaction apparatus;

acquiring ion dose-dependence data of intensity of γ-beam generated by hydrogen resonant nuclear reaction at peak positions of said profile;

fitting said data with a functional equation of said ion dose; and

determining hydrogen permeability of the film based on a constant that reflects a change rate of the y-beam in the functional equation.

2. The method according to claim 1 , wherein said acquiring said data and said fitting said data are performed with respect to a plurality of said specimen.

3. The method according to claim 1 , wherein said acquiring said data and said fitting said data are performed with respect to a plurality of depth positions in said specimen.

4. The method according to claim 1 , wherein said specimen has a thickness of equal to or more than 2 nm and equal to or less than 0.5 μm.

5. The method according to claim 1 , wherein said specimen includes a layer that serves as a reservoir of hydrogen.

6. The method according to claim 1 , wherein said specimen is provided on a substrate having a lower hydrogen absorption than that of said films constituting said specimen.

7. The method according to claim 6 , wherein said substrate is a monocrystalline silicon substrate.

8. The method according to claim 1 , wherein said plurality of films constituting said specimen include a first film and a second film containing a larger number of hydrogen traps than said first film.

9. The method according to claim 1 , wherein said acquiring said data and said fitting said data are performed with respect to a plurality of specimen temperatures different from each other, in which a temperature of said specimen is defined as specimen temperature.

10. The method according to claim 9 , wherein said specimen temperature in degree centigrade is changed in a range from a given negative temperature to an evaporation temperature of said specimen.

11. The method according to claim 9 , wherein said acquiring said data and said fitting said data are performed in a plurality of measurement atmospheres different from each other.

12. The method according to claim 1 , wherein said acquiring said data and said fitting said data are performed with an electric field being applied to said specimen.

13. A method of measuring hydrogen permeability of a film, comprising:

acquiring, with respect to a specimen including a plurality of films stacked on each other, ion dose-dependence data of intensity of γ-beam generated by hydrogen resonant nuclear reaction using a resonant nuclear reaction apparatus;

fitting said data with a functional equation of said ion dose; and

determining hydrogen permeability of the film from the functional equation,

wherein the functional equation is

I ( N )= H 0 +A×{ 1−exp(−σ× N )}  (1)

where N is the ion dose, H 0 is the initial hydrogen concentration, and σ is the hydrogen permeability, and

wherein the fitting step is a least squares fitting.

Assignments (3)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
CHANGE OF NAME Recorded Nov 2, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025235/0321 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 3, 2008
From: CHO, SHIEN; WILDE, MARKUS; FUKUTANI, KATSUYUKI
To: NEC CORPORATION; THE FOUNDATION FOR THE PROMOTION OF INDUSTRIAL SCIENCE
Reel/Frame 020751/0403 →