Sensing circuit of a phase change memory and sensing method thereof
A sensing circuit of a phase change memory. The sensing circuit comprises a storage capacitor and a reference capacitor, a storage memory device and a reference memory device, a storage discharge switch and a reference discharge switch, and an arbitrator. First terminals of the storage capacitor and the reference capacitor are respectively coupled to a pre-charge voltage via first switches. First terminals of the storage memory device and the reference memory device are respectively coupled to the first terminals of the storage capacitor and the reference capacitor. The storage discharge switch and the reference discharge switch are respectively coupled to second terminals of the storage memory device and the reference memory device. The arbitrator is coupled to the first terminals of the storage memory device and the reference memory device and provides an output as a read result of the storage memory device.
1. A sensing circuit of a phase change memory, comprising:
a storage capacitor and a reference capacitor having first terminals respectively coupled to a pre-charge voltage via first switches;
a storage memory device and a reference memory device having first terminals respectively coupled to the first terminals of the storage capacitor and the reference capacitor via second switches;
a storage discharge switch and a reference discharge switch respectively coupled to second terminals of the storage memory device and the reference memory device; and
an arbitrator coupled to the first terminals of the storage memory device and the reference memory device and providing an output signal as a read result of the storage memory device.
2. The sensing circuit of a phase change memory as claimed in claim 1 , wherein the storage memory device and the reference memory device are phase change memory devices.
3. The sensing circuit of a phase change memory as claimed in claim 1 , wherein the arbitrator is a digital circuit.
4. The sensing circuit of a phase change memory as claimed in claim 3 , wherein the digital circuit is an SR-latch.
5. The sensing circuit of a phase change memory as claimed in claim 1 , wherein the storage discharge switch and the reference discharge switch are MOS transistors, BJTs, or diodes.
6. The sensing circuit of a phase change memory as claimed in claim 1 , wherein the first switches are closed, the second switches are open, and the storage discharge switch and the reference discharge switch are open during a first stage of reading the storage memory device.
7. The sensing circuit of a phase change memory as claimed in claim 1 , wherein the first switches are open, the second switches are closed, and the storage discharge switch and the reference discharge switch are closed during a second stage of reading the storage memory device.
8. The sensing circuit of a phase change memory as claimed in claim 1 , wherein the second terminals of the storage capacitor and the reference capacitor are grounded.
9. A sensing method of a phase change memory, comprising:
charging or discharging a storage capacitor and a reference capacitor;
discharging or charging the storage capacitor and the reference capacitor via a storage memory device and a reference memory device; and
detecting voltage transition points of the storage memory device and the reference memory device and determining a storage state of the storage memory device according to the voltage transition points with an arbitrator,
wherein the arbitrator is a digital circuit and the digital circuit is an SR-latch.
10. The sensing method of a phase change memory as claimed in claim 9 , wherein the storage memory device and the reference memory device are phase change memory devices.