Memory leakage control circuit and method
View Patent ↗In one embodiment, a static random access memory (SRAM) is operable with first voltage and second voltages and includes a plurality of SRAM cells arranged in rows and columns, each SRAM cell being coupled to a respective wordline, respective complementary bitlines, and a source line and a control circuit connected between the source line and the second voltage. The control circuit is selectively operable in a working mode in which data in the plurality of SRAM cells can be accessed, a sleep mode is which data is retained but leakage is reduced and a shutdown mode in which the source line is allowed to float to a level that is substantially equal to the first voltage.
1. A static random access memory (SRAM) operable with a first voltage and a second voltage, said SRAM comprising:
a plurality of SRAM cells arranged in rows and columns, each SRAM cell being coupled to a respective wordline, respective complementary bitlines, and a source line; and
a control circuit connected between said source line and said second voltage, wherein said control circuit is selectively operable in a working mode in which said source line is connected to said second voltage such that data in said plurality of SRAM cells can be accessed, a sleep mode in which said source line is connected to a third voltage that is between said first voltage and said second voltage such that data is retained while leakage within said SRAM is decreased, and a shutdown mode in which said source line is isolated from said second voltage and said third voltage and is allowed to float to a level that is substantially equal to said first voltage.
2. The static random access memory according to claim 1 , wherein said control circuit comprises three N-channel transistors.
3. The static random access memory according to claim 1 , wherein said control circuit comprises a first transistor that is connected to said second voltage and to said source line and a second transistor that is connected to said second voltage and is connected to said source line through a third transistor.
4. The static random access memory according to claim 3 , wherein a gate and a drain of said second transistor are connected together.
5. The static random access memory according to claim 1 , wherein in said sleep mode, said source line stabilizes at substantially a diode drop above said second voltage.
6. The static random access memory according to claim 1 , wherein said SRAM is divided into a plurality of banks of cells, each bank being connected to a respective source line and a respective control circuit.
7. The static random access memory according to claim 1 , wherein said source line and said control circuit are connected to n columns of said memory on a per input/output (I/O) basis.
8. The static random access memory according to claim 7 , wherein said n is selected from 4, 8, 16, 32, and 64 columns.
9. The static random access memory according to claim 1 , wherein said second voltage comprises 0 volts.
10. A control circuit for a static random access memory (SRAM) that is operable between a first voltage and a second voltage, said control circuit comprising:
a first component configured to connect a source line of said SRAM to said second voltage during a working mode; and
a second component configured to connect said source line to a third voltage that is between said first voltage and said second voltage during a sleep mode;
wherein in a shutdown mode said source line is allowed to float to a level that is substantially equal to said first voltage.
11. The control circuit for an SRAM according to claim 10 , wherein said first component comprises a first N-channel transistor.
12. The control circuit for an SRAM according to claim 11 , wherein said second component comprises second and third N-channel transistors, said second N-channel transistor being connected to said second voltage and being connected to said source line through said third N-channel transistor.
13. The control circuit for an SRAM according to claim 12 , wherein a gate and a drain of said second N-channel transistor are connected together.
14. The control circuit for an SRAM according to claim 10 , wherein said third voltage is approximately a diode drop above said second voltage.
15. A memory leakage control method operable with a static random access memory (SRAM) that operates between a first voltage and a second voltage, said SRAM comprising a plurality of SRAM cells arranged in rows and columns, each SRAM cell being coupled to a respective wordline, respective complementary bitlines, and a source line, said method comprising:
selectively connecting said source line to said second voltage in a working mode;
selectively connecting said source line to a third voltage that is between said first voltage and said second voltage in a sleep mode; and
selectively isolating said source line from said second voltage and said third voltage and allowing said source line to float to a value substantially equal to said first voltage in a shutdown mode.
16. The memory leakage control method according to claim 15 , wherein selectively connecting said source line to a third voltage comprises connecting said source line to ground through a transistor connected to operate like a diode.
17. The memory leakage control method according to claim 15 , wherein selectively connecting said source line to said second voltage comprises turning on an N-channel field effect transistor connected between said source line and said second voltage.