Laser beam processing method for making a semiconductor device
View Patent ↗In a laser beam processing apparatus that processes a semiconductor wafer having a multi-layered wiring structure formed thereon, scribe lines defined thereon, and at least one alignment mark formed on any one of the scribe lines, a laser beam generator system generates a laser beam, and a movement system relatively moves the semiconductor wafer with respect to the laser beam such that the semiconductor wafer is irradiated with a laser beam along the scribe lines to partially remove the multi-layered wiring structure from the semiconductor wafer along the scribe lines. An irradiation control system controls the irradiation of the semiconductor wafer with the laser beam along the scribe lines such that the alignment mark is left on the scribe line.
1. A laser beam processing method comprising:
preparing a semiconductor wafer having a multi-layered wiring structure formed thereon, a scribe line defined thereon, and at least one alignment mark formed on said scribe line;
generating a laser beam;
relatively moving said semiconductor wafer with respect to said laser beam such that said semiconductor wafer is irradiated with a laser beam along said scribe line to partially remove said multi-layered wiring structure from said semiconductor wafer along said scribe line; and
controlling the irradiation of the semiconductor wafer with the laser beam along said scribe line such that said alignment mark is left on said scribe line.
2. The laser beam processing method as set forth in claim 1 , wherein, in controlling the irradiation of the semiconductor wafer with the laser beam along said scribe line such that said alignment mark is left on said scribe line, a power of the laser beam is decreased when said alignment mark is irradiated with said laser beam, whereby it is ensured that said alignment mark is left on said scribe line.
3. The laser beam processing method as set forth in claim 1 , wherein, in controlling the irradiation of the semiconductor wafer with the laser beam along said scribe line such that said alignment mark is left on said scribe line, the laser beam is deflected when said alignment mark is irradiated with said laser beam, whereby it is ensured that said alignment mark is left on said scribe line.