Device for releasing heat generated in the amplifier unit of a solid-state image sensing element
View Patent ↗A solid-state imaging device with an improved heat release-ability for releasing a heat generated in the amplifier unit of the solid-state image sensing element includes an elongated substrate (molded case 18 ), a metallic layer 16 exposed in a surface of the molded case 18 and extending along an elongating direction of the molded case 18 , and an elongated solid-state image sensing element 20 mounted on the metallic layer 16 , in which a thickness in a region of a metallic layer 16 right under an amplifier unit of the solid-state image sensing element 20 is larger than thicknesses in other regions of the metallic layer 16.
1. A solid-state imaging device, comprising:
an elongated substrate;
a metallic layer exposed to a surface of said substrate and extending in an elongating direction of the substrate; and
an elongated solid-state image sensing element mounted over said metallic layer,
wherein a thickness in a region of said metallic layer right under and in adherence with an amplifier unit of said solid-state image sensing element is larger than thicknesses in other regions of said metallic layer,
at least one protruding portion on the surface of said metallic layer in other regions except said region right under the amplifier unit,
wherein said solid-state image sensing element is partially mounted over said metallic layer in said region right under said amplifier unit and is also partially mounted over said protruding portion in other regions, so that said solid-state image sensing element is substantially horizontally maintained.
2. The solid-state imaging device as set forth in claim 1 , wherein said metallic layer is composed of a first metallic layer and a second metallic layer,
wherein the region of said metallic layer right under the amplifier unit of said solid-state image sensing element is composed of said first metallic layer and said second metallic layer disposed on a lower surface of the first the metallic layer, and
wherein the other regions of said metallic layer are composed of said first metallic layer.
3. The solid-state imaging device as set forth in claim 2 , wherein said second metallic layer contains one or more metal(s) selected from a group consisting of copper, aluminum and an alloy thereof.
4. The solid-state imaging device as set forth in claim 2 , wherein a thermal resistance of said solid-state imaging device is equal to or lower than 35 degree C./W, and a thickness of said second metallic layer is equal to or larger than 1 mm.
5. A solid-state imaging device, comprising:
an elongated substrate;
a metallic layer exposed to a surface of said substrate and extending in an elongating direction of the substrate;
an elongated solid-state image sensing element mounted over said metallic layer; and
at least one protruding portion on the surface of said metallic layer in other regions except said region right under an amplifier unit,
wherein a thickness in a region of said metallic layer right under said amplifier unit of said solid-state image sensing element is larger than thicknesses in other regions of said metallic layer, and
wherein said solid-state image sensing element is partially mounted over said metallic layer in said region right under said amplifier unit and is also partially mounted over said protruding portion in other regions, so that said solid-state image sensing element is substantially horizontally maintained.
6. A solid-state imaging device, comprising:
an elongated substrate;
a first metallic layer exposed to a surface of said substrate and extending along and within a bounds of an elongating direction of the substrate;
an elongated solid-state image sensing element mounted over said first metallic layer;
a second metallic layer adhered firmly to a lower surface of said first metallic layer by an alloy including gold and tin so that said second metallic layer being located right under an amplifier unit of said solid-state image sensing element; and
at least one protruding portion on the surface of said first metallic layer in other regions except said region right under the amplifier unit,
wherein a thickness in a region of said metallic layer right under said amplifier unit of said solid-state image sensing element is larger than thicknesses in other regions of said metallic layer,
wherein said solid-state image sensing element is partially mounted over said first metallic layer in said region right under said amplifier unit and is also partially mounted over said protruding portion in other regions, so that said solid-state image sensing element is substantially horizontally maintained.
7. The solid-state imaging device as set forth in claim 6 , wherein said first metallic layer is plated with gold and said second metallic layer is plated with tin.
8. The solid-state imaging device as set forth in claim 7 , wherein said second metallic layer contains one or more metal(s) selected from a group consisting of copper, aluminum and an alloy thereof.
9. The solid-state imaging device as set forth in claim 7 , wherein a thermal resistance of said solid-state imaging device is equal to or lower than 35 degree C./W, and a thickness of said second metallic layer is equal to or larger than 1 mm.