Single crystal silicon rod fabrication methods and a single crystal silicon rod structure
A method of fabricating a single crystal silicon rod may include forming an insulation layer on a substrate, forming a hole in the insulation layer, selectively growing silicon in the hole, forming a silicon layer on the hole and on the insulation layer, forming a rod pattern on the silicon layer in a direction that is non-radial with respect to the hole, and melting the silicon layer and crystallizing the silicon layer by illuminating a laser beam on the silicon layer where the rod pattern is formed to generate a nucleation site at a position corresponding to the hole. According to the method, a single crystal silicon rod having no defects may be formed.
1. A method of fabricating a single crystal silicon rod comprising:
forming an insulation layer on a substrate;
forming a hole in the insulation layer;
selectively growing silicon in the hole;
forming a silicon layer on the hole and on the insulation layer;
forming a rod pattern on the silicon layer in a direction that is non-radial with respect to the hole; and
melting the silicon layer and crystallizing the silicon layer by illuminating a laser beam on the silicon layer where the rod pattern is formed to generate a nucleation site at a position corresponding to the hole and the lengthwise direction of the rod is not a radial direction extending from the hole, the rod pattern being formed of single crystalline silicon,
wherein a grain boundary is filtered at a channel start portion, the channel start portion being a start portion of the rod during the crystallization of the silicon layer.
2. The method of claim 1 , wherein the depth of the hole is smaller than the thickness of the insulation layer.
3. The method of claim 2 , wherein the insulation layer includes a first insulation layer and a second insulation layer between the first insulation layer and the silicon layer.
4. The method of claim 3 , wherein the first insulation layer is formed of SiO 2 and the second insulation layer is formed of Si 3 N 4 .
5. The method of claim 1 , wherein the hole penetrates the insulation layer.
6. The method of claim 5 , further comprising:
a polycrystalline silicon layer between the substrate and the insulation layer.
7. The method of claim 6 , further comprising:
a first insulation layer between the substrate and the polycrystalline silicon layer,
wherein the insulation layer includes:
a second insulation layer on the polycrystalline silicon layer; and
a third insulation layer between the second insulation layer and the silicon layer.
8. The method of claim 7 , wherein the second insulation layer is formed of SiO 2 and the third insulation layer is formed of Si 3 N 4 .
9. The method of claim 1 , wherein the insulation layer is formed of at least one selected from the group consisting of SiO 2 , Al 2 O 3 , Si 3 N 4 , and AlN.
10. The method of claim 1 , wherein one or more holes are formed.
11. The method of claim 1 , wherein the diameter of the hole is between about 1 nm-about 300 nm.
12. The method of claim 1 , wherein the depth of the hole is between about 10 nm-about 300 nm.
13. The method of claim 1 , wherein the silicon layer is formed of amorphous or polycrystalline silicon.
14. The method of claim 13 , wherein the width of the rod is between about 20 nm-about 150 nm.
15. The method of claim 1 , wherein the silicon layer is formed of amorphous or polycrystalline silicon germanium (SiGe).
16. The method of claim 1 , wherein one or more rods are formed.
17. The method of claim 1 , wherein the width of the rod is between about 5 nm-about 1000 nm.