NROM fabrication method
View Patent ↗A method of fabricating an oxide-nitride-oxide (ONO) layer in a memory cell to retain charge well in the nitride layer includes the steps of forming a bottom oxide layer on a substrate, depositing a nitride layer and oxidizing a top oxide layer, thereby causing oxygen to be introduced into the nitride layer. Another method includes the steps of forming a bottom oxide layer on a substrate, depositing a nitride layer and oxidizing a portion of a top oxide layer, thereby causing oxygen to be introduced into the nitride layer and depositing a remaining portion of the top oxide layer, thereby assisting in controlling the amount of oxygen introduced into the nitride layer. A further method includes the steps of forming a bottom oxide layer on a substrate, depositing a nitride layer, depositing a portion of a top oxide layer and oxidizing a remaining portion of the top oxide layer, thereby causing oxygen to be introduced into the nitride layer.
1. A non-volatile memory cell comprising: a charge trapping layer comprised of a silicon nitride based dielectric, wherein said silicon nitride based dielectric includes a non-native and non-silicone based impurity and is at least partially located substantially above a channel of the cell.
2. The cell according to claim 1 , wherein said non-native impurity is oxygen.
3. The cell according to claim 2 , wherein said oxygen concentration is between approximately 10% and 80%.
4. The cell according to claim 1 , wherein said charge trapping layer is located substantially above an oxide layer having a thickness greater than 30 angstroms.
5. The cell according to claim 1 , wherein said charge trapping layer has a thickness of between approximately 20 and 150 angstroms.
6. The cell according to claim 1 , wherein said charge trapping layer has a thickness of between approximately 10 and 50 angstroms.
7. A non-volatile memory cell comprising: a charge trapping layer comprised of an impure silicon based dielectric located at least partially substantially above a channel of the cell, wherein said impurity is non-silicone based.
8. The cell according to claim 7 , wherein said impure silicon based dielectric is selected from the group consisting of silicon dioxide and silicon nitride.
9. The cell according to claim 7 , wherein the charge trapping layer is oxinitride.
10. The cell according to claim 7 , wherein the charge trapping layer has a thickness between approximately 20 and 50 angstroms.
11. The cell according to claim 7 , wherein the charge trapping layer has a thickness between approximately 10 and 150 angstroms.
12. The cell according to claim 7 , wherein at least a portion of the charge trapping layer is located substantially above an oxide layer having a thickness greater than approximately 30 angstroms.
13. A non-volatile memory cell comprising: a charge trapping layer comprised of an impure silicone based dielectric located at least partially substantially below a gate of the cell, wherein said impurity is non-silicone based.
14. The cell according to claim 13 , wherein said impure silicon based dielectric is selected from the group consisting of silicon dioxide and silicon nitride.
15. The cell according to claim 13 , wherein the charge trapping layer has a thickness between approximately 20 and 150 angstroms.
16. The cell according to claim 13 , wherein the charge trapping layer has a thickness between approximately 10 and 50 angstroms.
17. A non-volatile memory cell comprising: a charge trapping layer comprised of a silicon nitride based dielectric, wherein said silicon nitride based dielectric includes a non-native and non-silicone based impurity and is located substantially above a channel of the cell, wherein said impurity includes oxygen atoms.
18. The cell according to claim 17 , wherein said oxygen atoms are adapted to inhibit charge migration.
19. The cell according to claim 17 , wherein said dielectric has a thickness of between approximately 20 and 150 angstroms.
20. The cell according to claim 17 , wherein said dielectric has a thickness of between approximately 10 and 50 angstroms.