Semiconductor device and method for manufacturing the same
View Patent ↗An epitaxial layer is formed on an n+ semiconductor substrate by epitaxial growth. A gate trench is formed to the surface of gate trench so that the bottom of gate trench reaches middle of the epitaxial layer. A gate insulator is formed on the inner wall of gate trench and a polysilicon is formed in the gate trench with the gate insulator interposed therebetween. An HTO film is formed on the surface of the polysilicon and the n− epitaxial layer. At this time, an ion plantation is performed to the epitaxial layer through the HTO film. Hence, a p diffused base layer, an n+ diffused source layer, an n+ diffused source layer is formed. A CVD oxide film is formed on the HTO film. After a BPSG having flowability is deposited on the CVD oxide film, the BPSG film is planarized with a heat treatment of 900-1100 degree Celsius.
1. A method for manufacturing a semiconductor device comprising:
forming a first oxide film on a surface of a semiconductor layer and a polysilicon in a trench, the trench formed in the semiconductor layer;
forming a first diffused layer of a first conductivity type and a second diffused layer of a second conductivity type through the first oxide film;
forming a second oxide film on the first oxide film;
forming a flowable insulator film on the second oxide film;
performing a heat treatment for planarizing the insulator film and diffusing the second diffused layer to prescribe depth; and
etching the insulator film.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein
a thickness of the second oxide film is thicker than 24 angstrom.
3. The method of manufacturing a semiconductor device according to claim 2 , wherein
a thickness of the second oxide film is thicker than 80 angstrom when a temperature of the heat treatment is 950 degree Celsius and below.
4. The method of manufacturing a semiconductor device according to claim 2 , wherein
a thickness of the second oxide film is thicker than 200 angstrom when a temperature of the heat treatment is 1000 degree Celsius and below.
5. The method of manufacturing a semiconductor device according to claim 2 , wherein
a thickness of the second oxide film is thicker than 1200 angstrom when a temperature of the heat treatment is 1100 degree Celsius and below.
6. The method of manufacturing a semiconductor device according to claim 1 , wherein
the second oxide film is a CVD film.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein
the semiconductor layer, the first diffused layer, and the second diffused layer operate as a drain region, a base region and a source region, respectively.
8. The method of manufacturing a semiconductor device according to claim 1 , wherein
the first oxide film is an HTO film.
9. The method of manufacturing a semiconductor device according to claim 1 , further comprises a third oxide film between the polysilicon and the first oxide film.
10. The method of manufacturing a semiconductor device according to claim 9 , wherein
the third oxide film is NSG film.